High average power pockels cell
Patent
·
OSTI ID:1176624
A high average power pockels cell is disclosed which reduces the effect of thermally induced strains in high average power laser technology. The pockels cell includes an elongated, substantially rectangular crystalline structure formed from a KDP-type material to eliminate shear strains. The X- and Y-axes are oriented substantially perpendicular to the edges of the crystal cross-section and to the C-axis direction of propagation to eliminate shear strains.
- Research Organization:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- W-7405-ENG-48
- Assignee:
- The United States of America as represented by the United States Department of Energy (Washington, DC)
- Patent Number(s):
- H000868
- Application Number:
- 06/827703
- OSTI ID:
- 1176624
- Country of Publication:
- United States
- Language:
- English
Lossless KD*P Pockels Cell for High-Power Q Switching
|
journal | May 1971 |
Strain Effects in Electrooptic Light Modulators
|
journal | April 1964 |
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