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Title: Layered CU-based electrode for high-dielectric constant oxide thin film-based devices

Abstract

A layered device including a substrate; an adhering layer thereon. An electrical conducting layer such as copper is deposited on the adhering layer and then a barrier layer of an amorphous oxide of TiAl followed by a high dielectric layer are deposited to form one or more of an electrical device such as a capacitor or a transistor or MEMS and/or a magnetic device.

Inventors:
Publication Date:
Research Org.:
UChicago Argonne, LLC, Chicago, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1176291
Patent Number(s):
7,714,405
Application Number:
11/073,263
Assignee:
UChicago Argonne, LLC (Chicago, IL)
DOE Contract Number:  
W-31-109-ENG-38
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Auciello, Orlando. Layered CU-based electrode for high-dielectric constant oxide thin film-based devices. United States: N. p., 2010. Web.
Auciello, Orlando. Layered CU-based electrode for high-dielectric constant oxide thin film-based devices. United States.
Auciello, Orlando. Tue . "Layered CU-based electrode for high-dielectric constant oxide thin film-based devices". United States. https://www.osti.gov/servlets/purl/1176291.
@article{osti_1176291,
title = {Layered CU-based electrode for high-dielectric constant oxide thin film-based devices},
author = {Auciello, Orlando},
abstractNote = {A layered device including a substrate; an adhering layer thereon. An electrical conducting layer such as copper is deposited on the adhering layer and then a barrier layer of an amorphous oxide of TiAl followed by a high dielectric layer are deposited to form one or more of an electrical device such as a capacitor or a transistor or MEMS and/or a magnetic device.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2010},
month = {5}
}

Patent:

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