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Title: High-efficiency neutron detectors and methods of making same

Abstract

Neutron detectors, advanced detector process techniques and advanced compound film designs have greatly increased neutron-detection efficiency. One embodiment of the detectors utilizes a semiconductor wafer with a matrix of spaced cavities filled with one or more types of neutron reactive material such as 10B or 6LiF. The cavities are etched into both the front and back surfaces of the device such that the cavities from one side surround the cavities from the other side. The cavities may be etched via holes or etched slots or trenches. In another embodiment, the cavities are different-sized and the smaller cavities extend into the wafer from the lower surfaces of the larger cavities. In a third embodiment, multiple layers of different neutron-responsive material are formed on one or more sides of the wafer. The new devices operate at room temperature, are compact, rugged, and reliable in design.

Inventors:
;
Publication Date:
Research Org.:
The Regents of the University of Michigan, Ann Arbor, MI (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1176074
Patent Number(s):
7,164,138
Application Number:
10/695,019
Assignee:
The Regents of the University of Michigan (Ann Arbor, MI) OSTI
DOE Contract Number:  
W-31-109-ENG-38
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY

Citation Formats

McGregor, Douglas S., and Klann, Raymond. High-efficiency neutron detectors and methods of making same. United States: N. p., 2007. Web.
McGregor, Douglas S., & Klann, Raymond. High-efficiency neutron detectors and methods of making same. United States.
McGregor, Douglas S., and Klann, Raymond. Tue . "High-efficiency neutron detectors and methods of making same". United States. doi:. https://www.osti.gov/servlets/purl/1176074.
@article{osti_1176074,
title = {High-efficiency neutron detectors and methods of making same},
author = {McGregor, Douglas S. and Klann, Raymond},
abstractNote = {Neutron detectors, advanced detector process techniques and advanced compound film designs have greatly increased neutron-detection efficiency. One embodiment of the detectors utilizes a semiconductor wafer with a matrix of spaced cavities filled with one or more types of neutron reactive material such as 10B or 6LiF. The cavities are etched into both the front and back surfaces of the device such that the cavities from one side surround the cavities from the other side. The cavities may be etched via holes or etched slots or trenches. In another embodiment, the cavities are different-sized and the smaller cavities extend into the wafer from the lower surfaces of the larger cavities. In a third embodiment, multiple layers of different neutron-responsive material are formed on one or more sides of the wafer. The new devices operate at room temperature, are compact, rugged, and reliable in design.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 16 00:00:00 EST 2007},
month = {Tue Jan 16 00:00:00 EST 2007}
}

Patent:

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