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Title: Measuring bi-directional current through a field-effect transistor by virtue of drain-to-source voltage measurement

Abstract

A method and apparatus for measuring current, and particularly bi-directional current, in a field-effect transistor (FET) using drain-to-source voltage measurements. The drain-to-source voltage of the FET is measured and amplified. This signal is then compensated for variations in the temperature of the FET, which affects the impedance of the FET when it is switched on. The output is a signal representative of the direction of the flow of current through the field-effect transistor and the level of the current through the field-effect transistor. Preferably, the measurement only occurs when the FET is switched on.

Inventors:
Publication Date:
Research Org.:
Delphi Technologies, Inc., Troy, MI (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1176047
Patent Number(s):
7,154,291
Application Number:
10/925,025
Assignee:
Delphi Technologies, Inc. (Troy, MI) OSTI
DOE Contract Number:
FC36-02GO12020
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Turner, Steven Richard. Measuring bi-directional current through a field-effect transistor by virtue of drain-to-source voltage measurement. United States: N. p., 2006. Web.
Turner, Steven Richard. Measuring bi-directional current through a field-effect transistor by virtue of drain-to-source voltage measurement. United States.
Turner, Steven Richard. Tue . "Measuring bi-directional current through a field-effect transistor by virtue of drain-to-source voltage measurement". United States. doi:. https://www.osti.gov/servlets/purl/1176047.
@article{osti_1176047,
title = {Measuring bi-directional current through a field-effect transistor by virtue of drain-to-source voltage measurement},
author = {Turner, Steven Richard},
abstractNote = {A method and apparatus for measuring current, and particularly bi-directional current, in a field-effect transistor (FET) using drain-to-source voltage measurements. The drain-to-source voltage of the FET is measured and amplified. This signal is then compensated for variations in the temperature of the FET, which affects the impedance of the FET when it is switched on. The output is a signal representative of the direction of the flow of current through the field-effect transistor and the level of the current through the field-effect transistor. Preferably, the measurement only occurs when the FET is switched on.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 26 00:00:00 EST 2006},
month = {Tue Dec 26 00:00:00 EST 2006}
}

Patent:

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