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Title: Nanocrystal structures

Patent ·
OSTI ID:1176035

A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II–VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.

Research Organization:
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Organization:
USDOE
Assignee:
Massachusetts Institute of Technology (Cambridge, MA)
Patent Number(s):
7,150,910
Application Number:
10/294,742
OSTI ID:
1176035
Country of Publication:
United States
Language:
English

References (66)

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