Method to grow carbon thin films consisting entirely of diamond grains 3-5 nm in size and high-energy grain boundaries
Patent
·
OSTI ID:1175964
An ultrananocrystalline diamond (UNCD) having an average grain size between 3 and 5 nanometers (nm) with not more than about 8% by volume diamond having an average grain size larger than 10 nm. A method of manufacturing UNCD film is also disclosed in which a vapor of acetylene and hydrogen in an inert gas other than He wherein the volume ratio of acetylene to hydrogen is greater than 0.35 and less than 0.85, with the balance being an inert gas, is subjected to a suitable amount of energy to fragment at least some of the acetylene to form a UNCD film having an average grain size of 3 to 5 nm with not more than about 8% by volume diamond having an average grain size larger than 10 nm.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- W-31-109-ENG-38
- Assignee:
- Carlisle, John A., Plainfield, IL (United States)
- Patent Number(s):
- 7,128,889
- Application Number:
- 10/845,867
- OSTI ID:
- 1175964
- Resource Relation:
- Patent File Date: 2004 May 13
- Country of Publication:
- United States
- Language:
- English
Tight-binding molecular-dynamics simulation of impurities in ultrananocrystalline diamond grain boundaries
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journal | December 2001 |
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