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Title: Method to grow carbon thin films consisting entirely of diamond grains 3-5 nm in size and high-energy grain boundaries

Abstract

An ultrananocrystalline diamond (UNCD) having an average grain size between 3 and 5 nanometers (nm) with not more than about 8% by volume diamond having an average grain size larger than 10 nm. A method of manufacturing UNCD film is also disclosed in which a vapor of acetylene and hydrogen in an inert gas other than He wherein the volume ratio of acetylene to hydrogen is greater than 0.35 and less than 0.85, with the balance being an inert gas, is subjected to a suitable amount of energy to fragment at least some of the acetylene to form a UNCD film having an average grain size of 3 to 5 nm with not more than about 8% by volume diamond having an average grain size larger than 10 nm.

Inventors:
; ;
Publication Date:
Research Org.:
~Individually Owned Patent
Sponsoring Org.:
USDOE
OSTI Identifier:
1175964
Patent Number(s):
7,128,889
Application Number:
10/845,867
Assignee:
Carlisle, John A.; Auciello, Orlando; Birrell, James
DOE Contract Number:  
W-31-109-ENG-38
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Carlisle, John A., Auciello, Orlando, and Birrell, James. Method to grow carbon thin films consisting entirely of diamond grains 3-5 nm in size and high-energy grain boundaries. United States: N. p., 2006. Web.
Carlisle, John A., Auciello, Orlando, & Birrell, James. Method to grow carbon thin films consisting entirely of diamond grains 3-5 nm in size and high-energy grain boundaries. United States.
Carlisle, John A., Auciello, Orlando, and Birrell, James. Tue . "Method to grow carbon thin films consisting entirely of diamond grains 3-5 nm in size and high-energy grain boundaries". United States. https://www.osti.gov/servlets/purl/1175964.
@article{osti_1175964,
title = {Method to grow carbon thin films consisting entirely of diamond grains 3-5 nm in size and high-energy grain boundaries},
author = {Carlisle, John A. and Auciello, Orlando and Birrell, James},
abstractNote = {An ultrananocrystalline diamond (UNCD) having an average grain size between 3 and 5 nanometers (nm) with not more than about 8% by volume diamond having an average grain size larger than 10 nm. A method of manufacturing UNCD film is also disclosed in which a vapor of acetylene and hydrogen in an inert gas other than He wherein the volume ratio of acetylene to hydrogen is greater than 0.35 and less than 0.85, with the balance being an inert gas, is subjected to a suitable amount of energy to fragment at least some of the acetylene to form a UNCD film having an average grain size of 3 to 5 nm with not more than about 8% by volume diamond having an average grain size larger than 10 nm.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2006},
month = {10}
}

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Works referenced in this record:

Tight-binding molecular-dynamics simulation of impurities in ultrananocrystalline diamond grain boundaries
journal, December 2001