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Title: Method for the manufacture of phase shifting masks for EUV lithography

Abstract

A method for fabricating an EUV phase shift mask is provided that includes a substrate upon which is deposited a thin film multilayer coating that has a complex-valued reflectance. An absorber layer or a buffer layer is attached onto the thin film multilayer, and the thickness of the thin film multilayer coating is altered to introduce a direct modulation in the complex-valued reflectance to produce phase shifting features.

Inventors:
; ; ;
Publication Date:
Research Org.:
EUV Limited Liability Corporation, Santa Clara, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1175687
Patent Number(s):
7,022,435
Application Number:
10/256,454
Assignee:
EUV Limited Liability Corporation (Santa Clara, CA) OSTI
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Stearns, Daniel G., Sweeney, Donald W., Mirkarimi, Paul B., and Barty, Anton. Method for the manufacture of phase shifting masks for EUV lithography. United States: N. p., 2006. Web.
Stearns, Daniel G., Sweeney, Donald W., Mirkarimi, Paul B., & Barty, Anton. Method for the manufacture of phase shifting masks for EUV lithography. United States.
Stearns, Daniel G., Sweeney, Donald W., Mirkarimi, Paul B., and Barty, Anton. Tue . "Method for the manufacture of phase shifting masks for EUV lithography". United States. doi:. https://www.osti.gov/servlets/purl/1175687.
@article{osti_1175687,
title = {Method for the manufacture of phase shifting masks for EUV lithography},
author = {Stearns, Daniel G. and Sweeney, Donald W. and Mirkarimi, Paul B. and Barty, Anton},
abstractNote = {A method for fabricating an EUV phase shift mask is provided that includes a substrate upon which is deposited a thin film multilayer coating that has a complex-valued reflectance. An absorber layer or a buffer layer is attached onto the thin film multilayer, and the thickness of the thin film multilayer coating is altered to introduce a direct modulation in the complex-valued reflectance to produce phase shifting features.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Apr 04 00:00:00 EDT 2006},
month = {Tue Apr 04 00:00:00 EDT 2006}
}

Patent:

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