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Title: Method for the manufacture of phase shifting masks for EUV lithography

Abstract

A method for fabricating an EUV phase shift mask is provided that includes a substrate upon which is deposited a thin film multilayer coating that has a complex-valued reflectance. An absorber layer or a buffer layer is attached onto the thin film multilayer, and the thickness of the thin film multilayer coating is altered to introduce a direct modulation in the complex-valued reflectance to produce phase shifting features.

Inventors:
; ; ;
Publication Date:
Research Org.:
EUV Limited Liability Corporation, Santa Clara, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1175687
Patent Number(s):
7,022,435
Application Number:
10/256,454
Assignee:
EUV Limited Liability Corporation (Santa Clara, CA)
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Stearns, Daniel G., Sweeney, Donald W., Mirkarimi, Paul B., and Barty, Anton. Method for the manufacture of phase shifting masks for EUV lithography. United States: N. p., 2006. Web.
Stearns, Daniel G., Sweeney, Donald W., Mirkarimi, Paul B., & Barty, Anton. Method for the manufacture of phase shifting masks for EUV lithography. United States.
Stearns, Daniel G., Sweeney, Donald W., Mirkarimi, Paul B., and Barty, Anton. 2006. "Method for the manufacture of phase shifting masks for EUV lithography". United States. https://www.osti.gov/servlets/purl/1175687.
@article{osti_1175687,
title = {Method for the manufacture of phase shifting masks for EUV lithography},
author = {Stearns, Daniel G. and Sweeney, Donald W. and Mirkarimi, Paul B. and Barty, Anton},
abstractNote = {A method for fabricating an EUV phase shift mask is provided that includes a substrate upon which is deposited a thin film multilayer coating that has a complex-valued reflectance. An absorber layer or a buffer layer is attached onto the thin film multilayer, and the thickness of the thin film multilayer coating is altered to introduce a direct modulation in the complex-valued reflectance to produce phase shifting features.},
doi = {},
url = {https://www.osti.gov/biblio/1175687}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2006},
month = {4}
}