Method to repair localized amplitude defects in a EUV lithography mask blank
Patent
·
OSTI ID:1175557
A method and apparatus are provided for the repair of an amplitude defect in a multilayer coating. A significant number of layers underneath the amplitude defect are undamaged. The repair technique restores the local reflectivity of the coating by physically removing the defect and leaving a wide, shallow crater that exposes the underlying intact layers. The particle, pit or scratch is first removed the remaining damaged region is etched away without disturbing the intact underlying layers.
- Research Organization:
- The EUV Limited Liability Corporation, Santa Clara, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- W-7405-ENG-48
- Assignee:
- The EUV Limited Liability Corporation (Santa Clara, CA)
- Patent Number(s):
- 6,967,168
- Application Number:
- 09/896,722
- OSTI ID:
- 1175557
- Country of Publication:
- United States
- Language:
- English
Multiple-layer blank structure for phase-shifting mask fabrication
|
journal | January 1996 |
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