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Title: Method to repair localized amplitude defects in a EUV lithography mask blank

Abstract

A method and apparatus are provided for the repair of an amplitude defect in a multilayer coating. A significant number of layers underneath the amplitude defect are undamaged. The repair technique restores the local reflectivity of the coating by physically removing the defect and leaving a wide, shallow crater that exposes the underlying intact layers. The particle, pit or scratch is first removed the remaining damaged region is etched away without disturbing the intact underlying layers.

Inventors:
; ; ;
Publication Date:
Research Org.:
The EUV Limited Liability Corporation, Santa Clara, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1175557
Patent Number(s):
6,967,168
Application Number:
09/896,722
Assignee:
The EUV Limited Liability Corporation (Santa Clara, CA)
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Stearns, Daniel G., Sweeney, Donald W., Mirkarimi, Paul B., and Chapman, Henry N.. Method to repair localized amplitude defects in a EUV lithography mask blank. United States: N. p., 2005. Web.
Stearns, Daniel G., Sweeney, Donald W., Mirkarimi, Paul B., & Chapman, Henry N.. Method to repair localized amplitude defects in a EUV lithography mask blank. United States.
Stearns, Daniel G., Sweeney, Donald W., Mirkarimi, Paul B., and Chapman, Henry N.. 2005. "Method to repair localized amplitude defects in a EUV lithography mask blank". United States. https://www.osti.gov/servlets/purl/1175557.
@article{osti_1175557,
title = {Method to repair localized amplitude defects in a EUV lithography mask blank},
author = {Stearns, Daniel G. and Sweeney, Donald W. and Mirkarimi, Paul B. and Chapman, Henry N.},
abstractNote = {A method and apparatus are provided for the repair of an amplitude defect in a multilayer coating. A significant number of layers underneath the amplitude defect are undamaged. The repair technique restores the local reflectivity of the coating by physically removing the defect and leaving a wide, shallow crater that exposes the underlying intact layers. The particle, pit or scratch is first removed the remaining damaged region is etched away without disturbing the intact underlying layers.},
doi = {},
url = {https://www.osti.gov/biblio/1175557}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2005},
month = {11}
}

Works referenced in this record:

Multiple-layer blank structure for phase-shifting mask fabrication
journal, January 1996