Domain epitaxy for thin film growth

Narayan, Jagdish

Domain epitaxy for thin film growth

Patent · 18 October 2005

OSTI ID:1175528

Narayan, Jagdish

A method of forming an epitaxial film on a substrate includes growing an initial layer of a film on a substrate at a temperature T.sub.growth, said initial layer having a thickness h and annealing the initial layer of the film at a temperature T.sub.anneal, thereby relaxing the initial layer, wherein said thickness h of the initial layer of the film is greater than a critical thickness h.sub.c. The method further includes growing additional layers of the epitaxial film on the initial layer subsequent to annealing. In some embodiments, the method further includes growing a layer of the film that includes at least one amorphous island.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC05-00OR22725;

Assignee:: Kopin Corporation (Taunton, MA)

Patent Number(s):: 6,955,985

Application Number:: 10/608,780

OSTI ID:: 1175528

Country of Publication:: United States

Language:: English

References (50)

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