skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Method to fabricate multi-level silicon-based microstructures via use of an etching delay layer

Abstract

New methods for fabrication of silicon microstructures have been developed. In these methods, an etching delay layer is deposited and patterned so as to provide differential control on the depth of features being etched into a substrate material. Structures having features with different depth can be formed thereby in a single etching step.

Inventors:
; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1175465
Patent Number(s):
6,930,051
Application Number:
10/165,861
Assignee:
Sandia Corporation
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats

Manginell, Ronald P., Schubert, W. Kent, and Shul, Randy J. Method to fabricate multi-level silicon-based microstructures via use of an etching delay layer. United States: N. p., 2005. Web.
Manginell, Ronald P., Schubert, W. Kent, & Shul, Randy J. Method to fabricate multi-level silicon-based microstructures via use of an etching delay layer. United States.
Manginell, Ronald P., Schubert, W. Kent, and Shul, Randy J. Tue . "Method to fabricate multi-level silicon-based microstructures via use of an etching delay layer". United States. https://www.osti.gov/servlets/purl/1175465.
@article{osti_1175465,
title = {Method to fabricate multi-level silicon-based microstructures via use of an etching delay layer},
author = {Manginell, Ronald P. and Schubert, W. Kent and Shul, Randy J.},
abstractNote = {New methods for fabrication of silicon microstructures have been developed. In these methods, an etching delay layer is deposited and patterned so as to provide differential control on the depth of features being etched into a substrate material. Structures having features with different depth can be formed thereby in a single etching step.},
doi = {},
url = {https://www.osti.gov/biblio/1175465}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2005},
month = {8}
}

Patent:

Save / Share: