High resistivity aluminum antimonide radiation detector

Sherohman, John W.; Coombs, III, Arthur W.; Yee, Jick H.

Title: High resistivity aluminum antimonide radiation detector

Patent · Tue May 03 00:00:00 EDT 2005

OSTI ID:1175339

Sherohman, John W.; Coombs, III, Arthur W.; Yee, Jick H.

Bulk Aluminum Antimonide (AlSb)-based single crystal materials have been prepared for use as ambient (room) temperature X-ray and Gamma-ray radiation detection.

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Research Organization:: Univ. of California, Oakland, CA (United States); Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: W-7405-ENG-48

Assignee:: The Regents of the University of California (Oakland, CA)

Patent Number(s):: 6,887,441

Application Number:: 10/260,141

OSTI ID:: 1175339

Country of Publication:: United States

Language:: English

References (9)

Annealing and bulk crystal growth of undoped InP under controlled P-pressure: a perspective for the preparation of undoped SI InP? Hirt, G.; Hofmann, D.; Mosel, F. [Proceedings 1991] Third International Conference Indium Phosphide and Related Materials https://doi.org/10.1109/ICIPRM.1991.147285	conference	January 1991
Growth and characterization of doped and undoped AlSb single crystals Lin, C. T.; Schönherr, E.; Bender, H. Journal of Crystal Growth, Vol. 104, Issue 3 https://doi.org/10.1016/0022-0248(90)90008-9	journal	August 1990
Preparation of Single‐Phase Crystals of Compounds with Extremely Small Existence Regions Albers, W. The Journal of Chemical Physics, Vol. 43, Issue 12 https://doi.org/10.1063/1.1696704	journal	December 1965
Tantalum doping and high resistivity in aluminium antimonide Shaw, D.; McKell, H. D. British Journal of Applied Physics, Vol. 14, Issue 5 https://doi.org/10.1088/0508-3443/14/5/331	journal	May 1963
On the growth of AlSb single crystals Lin, C. T.; Schönherr, E.; Bender, H. Journal of Crystal Growth, Vol. 94, Issue 4 https://doi.org/10.1016/0022-0248(89)90129-2	journal	April 1989
Semi-insulating InP through wafer annealing Oda, O.; Uchida, M.; Kainosho, K. Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials https://doi.org/10.1109/ICIPRM.1997.600179	conference	January 1997
Free carrier lifetime in high resistivity aluminium antimonide Blamires, Norma G.; Gibbons, P. E. Solid State Communications, Vol. 5, Issue 5 https://doi.org/10.1016/0038-1098(67)90783-1	journal	May 1967
Brief communication. Reduction of dislocation density by thermal annealing of (100) gallium antimonide substrates Heinz, Christian International Journal of Electronics, Vol. 75, Issue 2 https://doi.org/10.1080/00207219308907106	journal	August 1993
ALSB as a High-Energy Photon Detector Yee, Jick H.; Swierkowski, Stefan P.; Sherohman, John W. IEEE Transactions on Nuclear Science, Vol. 24, Issue 4 https://doi.org/10.1109/TNS.1977.4329136	journal	June 1977

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