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Method for nanomachining high aspect ratio structures

Patent ·
OSTI ID:1175124
; ; ; ;
A nanomachining method for producing high-aspect ratio precise nanostructures. The method begins by irradiating a wafer with an energetic charged-particle beam. Next, a layer of patterning material is deposited on one side of the wafer and a layer of etch stop or metal plating base is coated on the other side of the wafer. A desired pattern is generated in the patterning material on the top surface of the irradiated wafer using conventional electron-beam lithography techniques. Lastly, the wafer is placed in an appropriate chemical solution that produces a directional etch of the wafer only in the area from which the resist has been removed by the patterning process. The high mechanical strength of the wafer materials compared to the organic resists used in conventional lithography techniques with allows the transfer of the precise patterns into structures with aspect ratios much larger than those previously achievable.
Research Organization:
The Regents of the University of California, Oakland, CA (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC03-76SF00098
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Number(s):
6,815,363
Application Number:
09/927,428
OSTI ID:
1175124
Country of Publication:
United States
Language:
English

References (4)

Chemical Etching of Charged‐Particle Tracks in Solids journal December 1962
Etching of Submicron Pores in Irradiated Mica journal March 1970
Zone plates with high efficiency in high orders of diffraction described by dynamical theory journal October 1997
Efficient high-order diffraction of extreme-ultraviolet light and soft x-rays by nanostructured volume gratings journal January 2001

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Related Subjects

36 MATERIALS SCIENCE