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Title: Oxidation preventative capping layer for deep-ultra-violet and soft x-ray multilayers

Abstract

The invention uses iridium and iridium compounds as a protective capping layer on multilayers having reflectivity in the deep ultra-violet to soft x-ray regime. The iridium compounds can be formed in one of two ways: by direct deposition of the iridium compound from a prepared target or by depositing a thin layer (e.g., 5-50 angstroms) of iridium directly onto an element. The deposition energy of the incoming iridium is sufficient to activate the formation of the desired iridium compound. The compounds of most interest are iridium silicide (IrSi.sub.x) and iridium molybdenide (IrMo.sub.x).

Inventors:
Publication Date:
Research Org.:
The Regents of the University of California, Oakland, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1174932
Patent Number(s):
6,759,141
Application Number:
10/137,065
Assignee:
University Of California, The Regents Of
DOE Contract Number:  
W-7405-ENG48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Prisbrey, Shon T. Oxidation preventative capping layer for deep-ultra-violet and soft x-ray multilayers. United States: N. p., 2004. Web.
Prisbrey, Shon T. Oxidation preventative capping layer for deep-ultra-violet and soft x-ray multilayers. United States.
Prisbrey, Shon T. Tue . "Oxidation preventative capping layer for deep-ultra-violet and soft x-ray multilayers". United States. https://www.osti.gov/servlets/purl/1174932.
@article{osti_1174932,
title = {Oxidation preventative capping layer for deep-ultra-violet and soft x-ray multilayers},
author = {Prisbrey, Shon T.},
abstractNote = {The invention uses iridium and iridium compounds as a protective capping layer on multilayers having reflectivity in the deep ultra-violet to soft x-ray regime. The iridium compounds can be formed in one of two ways: by direct deposition of the iridium compound from a prepared target or by depositing a thin layer (e.g., 5-50 angstroms) of iridium directly onto an element. The deposition energy of the incoming iridium is sufficient to activate the formation of the desired iridium compound. The compounds of most interest are iridium silicide (IrSi.sub.x) and iridium molybdenide (IrMo.sub.x).},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2004},
month = {7}
}

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