Junction-side illuminated silicon detector arrays
A junction-side illuminated detector array of pixelated detectors is constructed on a silicon wafer. A junction contact on the front-side may cover the whole detector array, and may be used as an entrance window for light, x-ray, gamma ray and/or other particles. The back-side has an array of individual ohmic contact pixels. Each of the ohmic contact pixels on the back-side may be surrounded by a grid or a ring of junction separation implants. Effective pixel size may be changed by separately biasing different sections of the grid. A scintillator may be coupled directly to the entrance window while readout electronics may be coupled directly to the ohmic contact pixels. The detector array may be used as a radiation hardened detector for high-energy physics research or as avalanche imaging arrays.
- Research Organization:
- Photon Imaging, Inc., Northridge, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FG03-99ER82854
- Assignee:
- Photon Imaging, Inc. (Northridge, CA)
- Patent Number(s):
- 6,713,768
- Application Number:
- 09/835,937
- OSTI ID:
- 1174792
- Country of Publication:
- United States
- Language:
- English
Development of low noise, back-side illuminated silicon photodiode arrays
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journal | June 1997 |
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