skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Thin layer imaging process for microlithography using radiation at strongly attenuated wavelengths

Abstract

A method for patterning of resist surfaces which is particularly advantageous for systems having low photon flux and highly energetic, strongly attenuated radiation. A thin imaging layer is created with uniform silicon distribution in a bilayer format. An image is formed by exposing selected regions of the silylated imaging layer to radiation. The radiation incident upon the silyliated resist material results in acid generation which either catalyzes cleavage of Si--O bonds to produce moieties that are volatile enough to be driven off in a post exposure bake step or produces a resist material where the exposed portions of the imaging layer are soluble in a basic solution, thereby desilylating the exposed areas of the imaging layer. The process is self limiting due to the limited quantity of silyl groups within each region of the pattern. Following the post exposure bake step, an etching step, generally an oxygen plasma etch, removes the resist material from the de-silylated areas of the imaging layer.

Inventors:
Publication Date:
Research Org.:
Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1174664
Patent Number(s):
6,673,525
Application Number:
09/510,726
Assignee:
EUV LLC (Santa Clara, CA)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY

Citation Formats

Wheeler, David R. Thin layer imaging process for microlithography using radiation at strongly attenuated wavelengths. United States: N. p., 2004. Web.
Wheeler, David R. Thin layer imaging process for microlithography using radiation at strongly attenuated wavelengths. United States.
Wheeler, David R. Tue . "Thin layer imaging process for microlithography using radiation at strongly attenuated wavelengths". United States. https://www.osti.gov/servlets/purl/1174664.
@article{osti_1174664,
title = {Thin layer imaging process for microlithography using radiation at strongly attenuated wavelengths},
author = {Wheeler, David R.},
abstractNote = {A method for patterning of resist surfaces which is particularly advantageous for systems having low photon flux and highly energetic, strongly attenuated radiation. A thin imaging layer is created with uniform silicon distribution in a bilayer format. An image is formed by exposing selected regions of the silylated imaging layer to radiation. The radiation incident upon the silyliated resist material results in acid generation which either catalyzes cleavage of Si--O bonds to produce moieties that are volatile enough to be driven off in a post exposure bake step or produces a resist material where the exposed portions of the imaging layer are soluble in a basic solution, thereby desilylating the exposed areas of the imaging layer. The process is self limiting due to the limited quantity of silyl groups within each region of the pattern. Following the post exposure bake step, an etching step, generally an oxygen plasma etch, removes the resist material from the de-silylated areas of the imaging layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2004},
month = {1}
}

Patent:

Save / Share: