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Title: Structure and method for controlling band offset and alignment at a crystalline oxide-on-semiconductor interface

Abstract

A crystalline oxide-on-semiconductor structure and a process for constructing the structure involves a substrate of silicon, germanium or a silicon-germanium alloy and an epitaxial thin film overlying the surface of the substrate wherein the thin film consists of a first epitaxial stratum of single atomic plane layers of an alkaline earth oxide designated generally as (AO).sub.n and a second stratum of single unit cell layers of an oxide material designated as (A'BO.sub.3).sub.m so that the multilayer film arranged upon the substrate surface is designated (AO).sub.n (A'BO.sub.3).sub.m wherein n is an integer repeat of single atomic plane layers of the alkaline earth oxide AO and m is an integer repeat of single unit cell layers of the A'BO.sub.3 oxide material. Within the multilayer film, the values of n and m have been selected to provide the structure with a desired electrical structure at the substrate/thin film interface that can be optimized to control band offset and alignment.

Inventors:
;
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1174597
Patent Number(s):
6,652,989
Application Number:
09/910,322
Assignee:
UT-Battelle, LLC (Oak Ridge, TN)
DOE Contract Number:  
AC05-00OR22725
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

McKee, Rodney A., and Walker, Frederick J. Structure and method for controlling band offset and alignment at a crystalline oxide-on-semiconductor interface. United States: N. p., 2003. Web.
McKee, Rodney A., & Walker, Frederick J. Structure and method for controlling band offset and alignment at a crystalline oxide-on-semiconductor interface. United States.
McKee, Rodney A., and Walker, Frederick J. Tue . "Structure and method for controlling band offset and alignment at a crystalline oxide-on-semiconductor interface". United States. https://www.osti.gov/servlets/purl/1174597.
@article{osti_1174597,
title = {Structure and method for controlling band offset and alignment at a crystalline oxide-on-semiconductor interface},
author = {McKee, Rodney A. and Walker, Frederick J.},
abstractNote = {A crystalline oxide-on-semiconductor structure and a process for constructing the structure involves a substrate of silicon, germanium or a silicon-germanium alloy and an epitaxial thin film overlying the surface of the substrate wherein the thin film consists of a first epitaxial stratum of single atomic plane layers of an alkaline earth oxide designated generally as (AO).sub.n and a second stratum of single unit cell layers of an oxide material designated as (A'BO.sub.3).sub.m so that the multilayer film arranged upon the substrate surface is designated (AO).sub.n (A'BO.sub.3).sub.m wherein n is an integer repeat of single atomic plane layers of the alkaline earth oxide AO and m is an integer repeat of single unit cell layers of the A'BO.sub.3 oxide material. Within the multilayer film, the values of n and m have been selected to provide the structure with a desired electrical structure at the substrate/thin film interface that can be optimized to control band offset and alignment.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2003},
month = {11}
}

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