Method of depositing an electrically conductive oxide buffer layer on a textured substrate and articles formed therefrom
An article with an improved buffer layer architecture includes a substrate having a textured metal surface, and an electrically conductive lanthanum metal oxide epitaxial buffer layer on the surface of the substrate. The article can also include an epitaxial superconducting layer deposited on the epitaxial buffer layer. An epitaxial capping layer can be placed between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article includes providing a substrate with a metal surface and depositing on the metal surface a lanthanum metal oxide epitaxial buffer layer. The method can further include depositing a superconducting layer on the epitaxial buffer layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-00OR22725
- Assignee:
- UT-Battelle, LLC (Oak Ridge, TN)
- Patent Number(s):
- 6,617,283
- Application Number:
- 09/888,115
- OSTI ID:
- 1174484
- Country of Publication:
- United States
- Language:
- English
Fatigue Properties of Lanthanum Strontium Manganate–lead Zirconate Titanate Epitaxial Thin Film Heterostructures Produced by a Chemical Solution Deposition Method
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journal | July 2000 |
Growth of biaxially textured buffer layers on rolled-Ni substrates by electron beam evaporation
|
journal | February 1997 |
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Method of depositing an electrically conductive oxide film on a textured metallic substrate and articles formed therefrom
Method of depositing an electrically conductive oxide film on a textured metallic substrate and articles formed therefrom