skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Optical method for the determination of grain orientation in films

Abstract

A method for the determination of grain orientation in a film sample is provided comprising the steps of measuring a first transient optical response of the film and determining the contribution to the transient optical response arising from a change in the energy distribution of the electrons in the sample, determining the contribution to the transient optical response arising from a propagating strain pulse within the sample, and determining the contribution to the transient optical response arising from a change in sample temperature of the sample. The grain orientation of the sample may be determined using the contributions to the transient optical response arising from the change in the energy distribution of the electrons, the propagating strain pulse, and the change in sample temperature. Additionally, a method for determination of the thickness of a film sample is provided. The grain orientation of the sample is first determined. The grain orientation, together with the velocity of sound and a propagation time of a strain pulse through the sample are then used to determine the thickness of the film sample.

Inventors:
Publication Date:
Research Org.:
Brown University Research Foundation, Providence, RI (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1174326
Patent Number(s):
6,563,591
Application Number:
10/012,985
Assignee:
Brown University Research Foundation (Providence, RI)
DOE Contract Number:  
FG02-86ER45267
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Maris, Humphrey J. Optical method for the determination of grain orientation in films. United States: N. p., 2003. Web.
Maris, Humphrey J. Optical method for the determination of grain orientation in films. United States.
Maris, Humphrey J. 2003. "Optical method for the determination of grain orientation in films". United States. https://www.osti.gov/servlets/purl/1174326.
@article{osti_1174326,
title = {Optical method for the determination of grain orientation in films},
author = {Maris, Humphrey J.},
abstractNote = {A method for the determination of grain orientation in a film sample is provided comprising the steps of measuring a first transient optical response of the film and determining the contribution to the transient optical response arising from a change in the energy distribution of the electrons in the sample, determining the contribution to the transient optical response arising from a propagating strain pulse within the sample, and determining the contribution to the transient optical response arising from a change in sample temperature of the sample. The grain orientation of the sample may be determined using the contributions to the transient optical response arising from the change in the energy distribution of the electrons, the propagating strain pulse, and the change in sample temperature. Additionally, a method for determination of the thickness of a film sample is provided. The grain orientation of the sample is first determined. The grain orientation, together with the velocity of sound and a propagation time of a strain pulse through the sample are then used to determine the thickness of the film sample.},
doi = {},
url = {https://www.osti.gov/biblio/1174326}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue May 13 00:00:00 EDT 2003},
month = {Tue May 13 00:00:00 EDT 2003}
}

Works referenced in this record:

Physics of ultrafast phenomena in solid state plasmas
journal, January 1978


Ion implant monitoring with thermal wave technology
journal, September 1985


Detection of thermal waves through optical reflectance
journal, June 1985


Picosecond Ellipsometry of Transient Electron-Hole Plasmas in Germanium
journal, May 1974


Thermal and plasma wave depth profiling in silicon
journal, September 1985


Thin‐film thickness measurements with thermal waves
journal, July 1983


Carrier lifetime versus ion‐implantation dose in silicon on sapphire
journal, February 1987


Picosecond spectroscopy of semiconductors
journal, January 1978


Analysis of lattice defects induced by ion implantation with photo‐acoustic displacement measurements
journal, November 1994


Measurements of the Kapitza conductance between diamond and several metals
journal, March 1992


Kapitza conductance and heat flow between solids at temperatures from 50 to 300 K
journal, December 1993


A New Method of Photothermal Displacement Measurement by Laser Interferometric Probe -Its Mechanism and Applications to Evaluation of Lattice Damage in Semiconductors
journal, November 1992