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Title: Process for growing epitaxial gallium nitride and composite wafers

Abstract

A novel growth procedure to grow epitaxial Group III metal nitride thin films on lattice-mismatched substrates is proposed. Demonstrated are the quality improvement of epitaxial GaN layers using a pure metallic Ga buffer layer on c-plane sapphire substrate. X-ray rocking curve results indicate that the layers had excellent structural properties. The electron Hall mobility increases to an outstandingly high value of .mu.>400 cm.sup.2 /Vs for an electron background concentration of 4.times.10.sup.17 cm.sup.-3.

Inventors:
; ; ;
Publication Date:
Research Org.:
Univ. of California, Oakland, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1174323
Patent Number(s):
6,563,144
Application Number:
09/824,843
Assignee:
The Regents of the University of California (Oakland, CA)
DOE Contract Number:  
AC03-76F00098
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Weber, Eicke R., Subramanya, Sudhir G., Kim, Yihwan, and Kruger, Joachim. Process for growing epitaxial gallium nitride and composite wafers. United States: N. p., 2003. Web.
Weber, Eicke R., Subramanya, Sudhir G., Kim, Yihwan, & Kruger, Joachim. Process for growing epitaxial gallium nitride and composite wafers. United States.
Weber, Eicke R., Subramanya, Sudhir G., Kim, Yihwan, and Kruger, Joachim. 2003. "Process for growing epitaxial gallium nitride and composite wafers". United States. https://www.osti.gov/servlets/purl/1174323.
@article{osti_1174323,
title = {Process for growing epitaxial gallium nitride and composite wafers},
author = {Weber, Eicke R. and Subramanya, Sudhir G. and Kim, Yihwan and Kruger, Joachim},
abstractNote = {A novel growth procedure to grow epitaxial Group III metal nitride thin films on lattice-mismatched substrates is proposed. Demonstrated are the quality improvement of epitaxial GaN layers using a pure metallic Ga buffer layer on c-plane sapphire substrate. X-ray rocking curve results indicate that the layers had excellent structural properties. The electron Hall mobility increases to an outstandingly high value of .mu.>400 cm.sup.2 /Vs for an electron background concentration of 4.times.10.sup.17 cm.sup.-3.},
doi = {},
url = {https://www.osti.gov/biblio/1174323}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue May 13 00:00:00 EDT 2003},
month = {Tue May 13 00:00:00 EDT 2003}
}

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