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Title: Epitaxial growth of silicon for layer transfer

Abstract

Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

Inventors:
;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1174201
Patent Number(s):
8,987,115
Application Number:
13/059,830
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO) GFO
DOE Contract Number:
AC36-99GO10337
Resource Type:
Patent
Resource Relation:
Patent File Date: 2010 Feb 25
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Teplin, Charles, and Branz, Howard M. Epitaxial growth of silicon for layer transfer. United States: N. p., 2015. Web.
Teplin, Charles, & Branz, Howard M. Epitaxial growth of silicon for layer transfer. United States.
Teplin, Charles, and Branz, Howard M. Tue . "Epitaxial growth of silicon for layer transfer". United States. doi:. https://www.osti.gov/servlets/purl/1174201.
@article{osti_1174201,
title = {Epitaxial growth of silicon for layer transfer},
author = {Teplin, Charles and Branz, Howard M},
abstractNote = {Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 24 00:00:00 EDT 2015},
month = {Tue Mar 24 00:00:00 EDT 2015}
}

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