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Title: Methods for improved growth of group III nitride semiconductor compounds

Abstract

Methods are disclosed for growing group III-nitride semiconductor compounds with advanced buffer layer technique. In an embodiment, a method includes providing a suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. The method includes forming an AlN buffer layer by flowing an ammonia gas into a growth zone of the processing chamber, flowing an aluminum halide containing precursor to the growth zone and at the same time flowing additional hydrogen halide or halogen gas into the growth zone of the processing chamber. The additional hydrogen halide or halogen gas that is flowed into the growth zone during buffer layer deposition suppresses homogeneous AlN particle formation. The hydrogen halide or halogen gas may continue flowing for a time period while the flow of the aluminum halide containing precursor is turned off.

Inventors:
; ;
Publication Date:
Research Org.:
Applied Materials, Inc., Santa Clara, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1172761
Patent Number(s):
8,980,002
Application Number:
13/469,045
Assignee:
Applied Materials, Inc. (Santa Clara, CA) DOEEE
DOE Contract Number:  
EE0003331
Resource Type:
Patent
Resource Relation:
Patent File Date: 2012 May 10
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Melnik, Yuriy, Chen, Lu, and Kojiri, Hidehiro. Methods for improved growth of group III nitride semiconductor compounds. United States: N. p., 2015. Web.
Melnik, Yuriy, Chen, Lu, & Kojiri, Hidehiro. Methods for improved growth of group III nitride semiconductor compounds. United States.
Melnik, Yuriy, Chen, Lu, and Kojiri, Hidehiro. Tue . "Methods for improved growth of group III nitride semiconductor compounds". United States. doi:. https://www.osti.gov/servlets/purl/1172761.
@article{osti_1172761,
title = {Methods for improved growth of group III nitride semiconductor compounds},
author = {Melnik, Yuriy and Chen, Lu and Kojiri, Hidehiro},
abstractNote = {Methods are disclosed for growing group III-nitride semiconductor compounds with advanced buffer layer technique. In an embodiment, a method includes providing a suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. The method includes forming an AlN buffer layer by flowing an ammonia gas into a growth zone of the processing chamber, flowing an aluminum halide containing precursor to the growth zone and at the same time flowing additional hydrogen halide or halogen gas into the growth zone of the processing chamber. The additional hydrogen halide or halogen gas that is flowed into the growth zone during buffer layer deposition suppresses homogeneous AlN particle formation. The hydrogen halide or halogen gas may continue flowing for a time period while the flow of the aluminum halide containing precursor is turned off.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 17 00:00:00 EDT 2015},
month = {Tue Mar 17 00:00:00 EDT 2015}
}

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Works referenced in this record:

Growth and design of deep-UV (240–290nm) light emitting diodes using AlGaN alloys
journal, December 2004


Aluminum nitride substrate growth by halide vapor transport epitaxy
journal, March 2003


Modeling of gas phase and surface reactions in an aluminum nitride growth system
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Epitaxial growth of aluminum nitride
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Chemical vapour deposition of polycrystalline AlN films from AlCl3–NH3 mixtures.
journal, March 2002


MOVPE-like HVPE of AlN using solid aluminum trichloride source
journal, January 2007


Growth of thick AlN layers by hydride vapor-phase epitaxy
journal, July 2005


Growth of the AlN nano-pillar crystal films by means of a halide chemical vapor deposition under atmospheric pressure
journal, July 2004


Micro freef-low IEF enhanced by active cooling and functionalized gels
journal, December 2006

  • Albrecht, Jacob W.; Jensen, Klavs F.
  • ELECTROPHORESIS, Vol. 27, Issue 24, p. 4960-4969
  • DOI: 10.1002/elps.200600436