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Title: Photon detector configured to employ the Gunn effect and method of use

Abstract

Embodiments disclosed herein relate to photon detectors configured to employ the Gunn effect for detecting high-energy photons (e.g., x-rays and gamma rays) and methods of use. In an embodiment, a photon detector for detecting high-energy photons is disclosed. The photon detector includes a p-i-n semiconductor diode having a p-type semiconductor region, an n-type semiconductor region, and a compensated i-region disposed between the p-type semiconductor region and the n-type semiconductor region. The compensated i-region and has a width of about 100 .mu.m to about 400 .mu.m and is configured to exhibit the Gunn effect when the p-i-n semiconductor diode is forward biased a sufficient amount. The compensated i-region is doped to include a free carrier concentration of less than about 10.sup.10 cm.sup.-3.

Inventors:
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1172749
Patent Number(s):
8,981,312
Application Number:
14/023,348
Assignee:
Sandia Corporation (Albuquerque, NM) SSO
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Sep 10
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY

Citation Formats

Cich, Michael J. Photon detector configured to employ the Gunn effect and method of use. United States: N. p., 2015. Web.
Cich, Michael J. Photon detector configured to employ the Gunn effect and method of use. United States.
Cich, Michael J. Tue . "Photon detector configured to employ the Gunn effect and method of use". United States. doi:. https://www.osti.gov/servlets/purl/1172749.
@article{osti_1172749,
title = {Photon detector configured to employ the Gunn effect and method of use},
author = {Cich, Michael J},
abstractNote = {Embodiments disclosed herein relate to photon detectors configured to employ the Gunn effect for detecting high-energy photons (e.g., x-rays and gamma rays) and methods of use. In an embodiment, a photon detector for detecting high-energy photons is disclosed. The photon detector includes a p-i-n semiconductor diode having a p-type semiconductor region, an n-type semiconductor region, and a compensated i-region disposed between the p-type semiconductor region and the n-type semiconductor region. The compensated i-region and has a width of about 100 .mu.m to about 400 .mu.m and is configured to exhibit the Gunn effect when the p-i-n semiconductor diode is forward biased a sufficient amount. The compensated i-region is doped to include a free carrier concentration of less than about 10.sup.10 cm.sup.-3.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 17 00:00:00 EDT 2015},
month = {Tue Mar 17 00:00:00 EDT 2015}
}

Patent:

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Works referenced in this record:

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Performance of semi-insulating GaAs-based radiation detectors: Role of key physical parameters of base materials
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