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Title: Stackable multi-port gas nozzles

Patent ·
OSTI ID:1171700

One embodiment provides a reactor for material deposition. The reactor includes a chamber and at least one gas nozzle. The chamber includes a pair of susceptors, each having a front side and a back side. The front side mounts a number of substrates. The susceptors are positioned vertically so that the front sides of the susceptors face each other, and the vertical edges of the susceptors are in contact with each other, thereby forming a substantially enclosed narrow channel between the substrates mounted on different susceptors. The gas nozzle includes a gas-inlet component situated in the center and a detachable gas-outlet component stacked around the gas-inlet component. The gas-inlet component includes at least one opening coupled to the chamber, and is configured to inject precursor gases into the chamber. The detachable gas-outlet component includes at least one opening coupled to the chamber, and is configured to output exhaust gases from the chamber.

Research Organization:
Silevo, Inc., Fremont, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
EE0000589
Assignee:
Silevo, Inc. (Fremont, CA)
Patent Number(s):
8,968,473
Application Number:
12/880,941
OSTI ID:
1171700
Resource Relation:
Patent File Date: 2010 Sep 13
Country of Publication:
United States
Language:
English

References (7)

Film forming apparatus patent August 1989
Diamond synthesizing apparatus patent December 1991
Apparatus for eliminating residual nitrogen contamination in epitaxial layers of silicon carbide and resulting product patent June 1992
Variable rate distribution gas flow reaction chamber patent December 1993
Surface treating apparatus, surface treating method and semiconductor device manufacturing method patent April 1996
Epitaxial growth furnace patent July 2001
Vacuum operation apparatus patent November 2002

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