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Title: Carrier tunneling in models of irradiated heterojunction bipolar transistors

Abstract

As part of Sandia's program to simulate the effect of displacement damage on operation of heterojunction bipolar transistors (HBTs), we are examining the formulation in 1-D of band-to-band (bb) and band-to-trap (b-t) carrier tunneling.

Authors:
 [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1171564
Report Number(s):
SAND-2014-17272R
537184
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Wampler, William R., and Myers, Samuel Maxwell. Carrier tunneling in models of irradiated heterojunction bipolar transistors. United States: N. p., 2014. Web. doi:10.2172/1171564.
Wampler, William R., & Myers, Samuel Maxwell. Carrier tunneling in models of irradiated heterojunction bipolar transistors. United States. https://doi.org/10.2172/1171564
Wampler, William R., and Myers, Samuel Maxwell. 2014. "Carrier tunneling in models of irradiated heterojunction bipolar transistors". United States. https://doi.org/10.2172/1171564. https://www.osti.gov/servlets/purl/1171564.
@article{osti_1171564,
title = {Carrier tunneling in models of irradiated heterojunction bipolar transistors},
author = {Wampler, William R. and Myers, Samuel Maxwell},
abstractNote = {As part of Sandia's program to simulate the effect of displacement damage on operation of heterojunction bipolar transistors (HBTs), we are examining the formulation in 1-D of band-to-band (bb) and band-to-trap (b-t) carrier tunneling.},
doi = {10.2172/1171564},
url = {https://www.osti.gov/biblio/1171564}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Aug 01 00:00:00 EDT 2014},
month = {Fri Aug 01 00:00:00 EDT 2014}
}