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Title: Photon extraction from nitride ultraviolet light-emitting devices

Abstract

In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.

Inventors:
; ;
Publication Date:
Research Org.:
Crystal IS, Inc., Green Island, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1171104
Patent Number(s):
8,962,359
Application Number:
13/553,093
Assignee:
Crystal IS, Inc. (Green Island, NY) CHO
DOE Contract Number:
W911NF-09-2-0068
Resource Type:
Patent
Resource Relation:
Patent File Date: 2012 Jul 19
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Schowalter, Leo J, Chen, Jianfeng, and Grandusky, James R. Photon extraction from nitride ultraviolet light-emitting devices. United States: N. p., 2015. Web.
Schowalter, Leo J, Chen, Jianfeng, & Grandusky, James R. Photon extraction from nitride ultraviolet light-emitting devices. United States.
Schowalter, Leo J, Chen, Jianfeng, and Grandusky, James R. Tue . "Photon extraction from nitride ultraviolet light-emitting devices". United States. doi:. https://www.osti.gov/servlets/purl/1171104.
@article{osti_1171104,
title = {Photon extraction from nitride ultraviolet light-emitting devices},
author = {Schowalter, Leo J and Chen, Jianfeng and Grandusky, James R},
abstractNote = {In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Feb 24 00:00:00 EST 2015},
month = {Tue Feb 24 00:00:00 EST 2015}
}

Patent:

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