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Title: Photon extraction from nitride ultraviolet light-emitting devices


In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.

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Publication Date:
Research Org.:
Crystal IS, Inc., Green Island, NY (United States)
Sponsoring Org.:
OSTI Identifier:
Patent Number(s):
Application Number:
Crystal IS, Inc. (Green Island, NY) CHO
DOE Contract Number:  
Resource Type:
Resource Relation:
Patent File Date: 2012 Jul 19
Country of Publication:
United States

Citation Formats

Schowalter, Leo J, Chen, Jianfeng, and Grandusky, James R. Photon extraction from nitride ultraviolet light-emitting devices. United States: N. p., 2015. Web.
Schowalter, Leo J, Chen, Jianfeng, & Grandusky, James R. Photon extraction from nitride ultraviolet light-emitting devices. United States.
Schowalter, Leo J, Chen, Jianfeng, and Grandusky, James R. Tue . "Photon extraction from nitride ultraviolet light-emitting devices". United States. doi:.
title = {Photon extraction from nitride ultraviolet light-emitting devices},
author = {Schowalter, Leo J and Chen, Jianfeng and Grandusky, James R},
abstractNote = {In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Feb 24 00:00:00 EST 2015},
month = {Tue Feb 24 00:00:00 EST 2015}


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