Photon extraction from nitride ultraviolet light-emitting devices

Schowalter, Leo J; Chen, Jianfeng; Grandusky, James R

Photon extraction from nitride ultraviolet light-emitting devices

Patent · 23 February 2015

OSTI ID:1171104

Schowalter, Leo J; Chen, Jianfeng; Grandusky, James R

In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.

View Patent

Research Organization:: Crystal IS, Inc., Green Island, NY (United States)

Sponsoring Organization:: USDOE

Assignee:: Crystal IS, Inc. (Green Island, NY)

Patent Number(s):: 8,962,359

Application Number:: 13/553,093

OSTI ID:: 1171104

Country of Publication:: United States

Language:: English

References (143)

Preparation of GaN Single Crystals Using a Na Flux Yamane, Hisanori; Shimada, Masahiko; Clarke, Simon J. Chemistry of Materials, Vol. 9, Issue 2, p. 413-416 https://doi.org/10.1021/cm960494s	journal	February 1997
Optical studies of bulk and homoepitaxial films of III–V nitride semiconductors Freitas, Jaime A. Journal of Crystal Growth, Vol. 281, Issue 1, p. 168-182 https://doi.org/10.1016/j.jcrysgro.2005.03.048	journal	July 2005
Electrical conductivity of materials from mixed aluminum and silicon nitrides Gorbatov, A. G.; Kamyshov, V. M. Soviet Powder Metallurgy and Metal Ceramics, Vol. 9, Issue 11, p. 917-920 https://doi.org/10.1007/BF00803792	journal	November 1970
Effects of Al composition on luminescence properties of europium implanted Al_xGa_1−xN (0 ≤ x ≤ 1) Nakanishi, Y.; Wakahara, A.; Okada, H. physica status solidi (c), Vol. 0, Issue 7, p. 2623-2626 https://doi.org/10.1002/pssc.200303440	journal	December 2003
Theoretical investigation of native defects, impurities, and complexes in aluminum nitride Stampfl, C.; Van de Walle, C. G. Physical Review B, Vol. 65, Issue 15 https://doi.org/10.1103/PhysRevB.65.155212	journal	April 2002
Characterization of bulk AlN crystals with positron annihilation spectroscopy Tuomisto, F.; Mäki, J.-M.; Chemekova, T. Yu. Journal of Crystal Growth, Vol. 310, Issue 17, p. 3998-4001 https://doi.org/10.1016/j.jcrysgro.2008.06.013	journal	August 2008
Seeded growth of AlN single crystals by physical vapor transport Zhuang, D.; Herro, Z. G.; Schlesser, R. Journal of Crystal Growth, Vol. 287, Issue 2, p. 372-375 https://doi.org/10.1016/j.jcrysgro.2005.11.047	journal	January 2006
Optically detected electron paramagnetic resonance of AlN single crystals Mason, P. M.; Przybylinska, H.; Watkins, G. D. Physical Review B, Vol. 59, Issue 3 https://doi.org/10.1103/PhysRevB.59.1937	journal	January 1999
Misfit Dislocation Generation in InGaN Epilayers on Free-Standing GaN Liu, Rong; Mei, Jin; Srinivasan, Sridhar Japanese Journal of Applied Physics, Vol. 45, Issue No. 22 https://doi.org/10.1143/JJAP.45.L549	journal	June 2006
Physical vapor transport growth of large AlN crystals Singh, N. B.; Berghmans, A.; Zhang, H. Journal of Crystal Growth, Vol. 250, Issue 1-2, p. 107-112 https://doi.org/10.1016/S0022-0248(02)02235-2	journal	March 2003
Study of cathodoluminescence spectroscopy of aluminum nitride Hossain, Fazla R. M.; Tang, Xiao; Wongchotigul, Kobchat Microelectronic Manufacturing 1996, SPIE Proceedings https://doi.org/10.1117/12.250938	conference	September 1996
Characterization of bulk AlN with low oxygen content Bickermann, M.; Epelbaum, B. M.; Winnacker, A. Journal of Crystal Growth, Vol. 269, Issue 2-4, p. 432-442 https://doi.org/10.1016/j.jcrysgro.2004.05.071	journal	September 2004
Dislocations in GaN-Based Laser Diodes on Epitaxial Lateral Overgrown GaN Layers Tomiya, S.; Nakajima, H.; Funato, K. physica status solidi (a), Vol. 188, Issue 1, p. 69-72 https://doi.org/10.1002/1521-396X(200111)188:1<69::AID-PSSA69>3.0.CO;2-8	journal	November 2001
Highly Si-doped AlN grown by plasma-assisted molecular-beam epitaxy Hermann, M.; Furtmayr, F.; Bergmaier, A. Applied Physics Letters, Vol. 86, Issue 19, Article No. 192108 https://doi.org/10.1063/1.1923180	journal	May 2005
F-Type Centers in Neutron-Irradiated AIN Atobe, Kozo; Honda, Makoto; Fukuoka, Noboru Japanese Journal of Applied Physics, Vol. 29, Issue Part 1, No. 1 https://doi.org/10.1143/JJAP.29.150	journal	January 1990
Light Extraction Methods in Light-Emitting Diodes Wierer, Jonathan J. CLEO: Science and Innovations, CLEO:2011 - Laser Applications to Photonic Applications https://doi.org/10.1364/CLEO_SI.2011.CMA1	conference	January 2011
Electron paramagnetic resonance of a donor in aluminum nitride crystals Evans, S. M.; Giles, N. C.; Halliburton, L. E. Applied Physics Letters, Vol. 88, Issue 6, Article No. 062112 https://doi.org/10.1063/1.2173237	journal	February 2006
Growth of flat p-GaN contact layer by pulse flow method for high light-extraction AlGaN deep-UV LEDs with Al-based electrode Akiba, Masahiro; Hirayama, Hideki; Tomita, Yuji physica status solidi (c), Vol. 9, Issue 3-4, p. 806-809 https://doi.org/10.1002/pssc.201100370	journal	February 2012
Strain relaxation due to V-pit formation in InxGa1−xN∕GaN epilayers grown on sapphire Song, T. L. Journal of Applied Physics, Vol. 98, Issue 8 https://doi.org/10.1063/1.2108148	journal	October 2005
Codoping method for the fabrication of low-resistivity wide band-gap semiconductors in p-type GaN, p-type AlN and n-type diamond: prediction versus experiment Katayama-Yoshida, H.; Nishimatsu, T.; Yamamoto, T. Journal of Physics: Condensed Matter, Vol. 13, Issue 40 https://doi.org/10.1088/0953-8984/13/40/304	journal	September 2001
Photoluminescence properties of AlN homoepilayers with different orientations Sedhain, A.; Nepal, N.; Nakarmi, M. L. Applied Physics Letters, Vol. 93, Issue 4, Article No. 041905 https://doi.org/10.1063/1.2965613	journal	July 2008
Native oxide and hydroxides and their implications for bulk AlN crystal growth Edgar, J. H.; Du, L.; Nyakiti, L. Journal of Crystal Growth, Vol. 310, Issue 17, p. 4002-4006 https://doi.org/10.1016/j.jcrysgro.2008.06.014	journal	August 2008
Structural and optical properties of near-UV LEDs grown on V-grooved sapphire substrates fabricated by wet etching Cheong, H. S.; Na, M. G.; Choi, Y. J. Journal of Crystal Growth, Vol. 298, p. 699-702 https://doi.org/10.1016/j.jcrysgro.2006.11.037	journal	January 2007
Photoluminescence studies of impurity transitions in AlGaN alloys Nepal, N.; Nakarmi, M. L.; Lin, J. Y. Applied Physics Letters, Vol. 89, Issue 9, Article No. 092107 https://doi.org/10.1063/1.2337856	journal	August 2006
AlGaN-Based 355 nm UV Light-Emitting Diodes with High Power Efficiency Gutt, Richard; Passow, Thorsten; Kunzer, Michael Applied Physics Express, Vol. 5, Issue 3 https://doi.org/10.1143/APEX.5.032101	journal	February 2012
Recent Developments in Nitride Chemistry Niewa, R.; DiSalvo, F. J. Chemistry of Materials, Vol. 10, Issue 10, p. 2733-2752 https://doi.org/10.1021/cm980137c	journal	October 1998
Efficiency enhancement of UV/blue light emitting diodes via nanoscaled epitaxial lateral overgrowth of GaN on a SiO₂ nanorod-array patterned sapphire substrate Chiu, C. H.; Li, Zhen-Yu; Chao, C. L. Journal of Crystal Growth, Vol. 310, Issue 23, p. 5170-5174 https://doi.org/10.1016/j.jcrysgro.2008.06.051	journal	November 2008
Growth of AlN bulk crystals from the vapor phase Schlesser, Raoul; Dalmau, Rafael; Yakimova, Rositza MRS Proceedings, Vol. 693 https://doi.org/10.1557/PROC-693-I9.4.1	journal	January 2001
Seeded growth of AlN bulk single crystals by sublimation Schlesser, R.; Dalmau, R.; Sitar, Z. Journal of Crystal Growth, Vol. 241, Issue 4, p. 416-420 https://doi.org/10.1016/S0022-0248(02)01319-2	journal	June 2002
Growth of AlN crystals on AlN/SiC seeds by AlN powder sublimation in nitrogen atmosphere Noveski, V.; Schlesser, R.; Mahajan, S. MRS Internet Journal of Nitride Semiconductor Research, Vol. 9 https://doi.org/10.1557/S1092578300000375	journal	January 2004
Defects and defect identification in group III-nitrides Meyer, B. K.; Hofmann, D. M.; Alves, H. Materials Science and Engineering: B, Vol. 71, Issue 1-3, p. 69-76 https://doi.org/10.1016/S0921-5107(99)00351-7	journal	February 2000
Mass transfer in AlN crystal growth at high temperatures Noveski, V.; Schlesser, R.; Mahajan, S. Journal of Crystal Growth, Vol. 264, Issue 1-3, p. 369-378 https://doi.org/10.1016/j.jcrysgro.2004.01.028	journal	March 2004
Ir/Ag reflector for high-performance GaN-based near UV light emitting diodes Ban, Keun-Yong; Hong, Hyun-Gi; Noh, Do-Young Materials Science and Engineering: B, Vol. 133, Issue 1-3, p. 26-29 https://doi.org/10.1016/j.mseb.2006.04.045	journal	August 2006
340–350 nm GaN-free UV-LEDs Nishida, T.; Ban, T.; Kobayashi, N. physica status solidi (a), Vol. 200, Issue 1, p. 106-109 https://doi.org/10.1002/pssa.200303411	journal	November 2003
The formation of nanopipes caused by donor impurities in GaN: A theoretical study for the case of oxygen Gutierrez, R. Philosophical Magazine Letters, Vol. 79, Issue 3, p. 147-152 https://doi.org/10.1080/095008399177525	journal	March 1999
Enhancement of (AlGaIn)N near-UV LED efficiency using freestanding GaN substrate Maier, M.; Köhler, K.; Kunzer, M. physica status solidi (c), Vol. 5, Issue 6, p. 2133-2135 https://doi.org/10.1002/pssc.200778475	journal	May 2008
High-quality and crack-free Al_xGa_1−xN (x∼0.2) grown on sapphire by a two-step growth method Shih, C. F.; Keh, M. Y.; Wang, Y. N. Journal of Crystal Growth, Vol. 277, Issue 1-4, p. 44-50 https://doi.org/10.1016/j.jcrysgro.2005.01.015	journal	April 2005
On mechanisms of sublimation growth of AlN bulk crystals Segal, A. S.; Karpov, S. Yu.; Makarov, Yu. N. Journal of Crystal Growth, Vol. 211, Issue 1-4, p. 68-72 https://doi.org/10.1016/S0022-0248(99)00844-1	journal	April 2000
Optimizing textured structures possessing both optical gradient and diffraction properties to increase the extraction efficiency of light-emitting diodes Hsu, Chan-Wei; Lee, Yang-Chun; Chen, Hsuen-Li Photonics and Nanostructures - Fundamentals and Applications, Vol. 10, Issue 4, p. 523-533 https://doi.org/10.1016/j.photonics.2012.04.005	journal	October 2012
A Global Growth Rate Model for Aluminum Nitride Sublimation Liu, Lianghong; Edgar, J. H. Journal of The Electrochemical Society, Vol. 149, Issue 1, p. G12-G15 https://doi.org/10.1149/1.1421349	journal	January 2002
Some effects of oxygen impurities on AlN and GaN Slack, Glen A.; Schowalter, Leo J.; Morelli, Donald Journal of Crystal Growth, Vol. 246, Issue 3-4, p. 287-298 https://doi.org/10.1016/S0022-0248(02)01753-0	journal	December 2002
Enhancement of light extraction efficiency of ultraviolet light emitting diodes by patterning of SiO₂ nanosphere arrays Kim, B. J.; Jung, H.; Shin, J. Thin Solid Films, Vol. 517, Issue 8, p. 2742-2744 https://doi.org/10.1016/j.tsf.2008.11.067	journal	February 2009
The growth and optical properties of large, high-quality AlN single crystals Strassburg, Martin; Senawiratne, Jayantha; Dietz, Nikolaus Journal of Applied Physics, Vol. 96, Issue 10, p. 5870-5876 https://doi.org/10.1063/1.1801159	journal	November 2004
Ultraviolet electroluminescence from ordered ZnO nanorod array/p-GaN light emitting diodes Dong, J. J.; Zhang, X. W.; Yin, Z. G. Applied Physics Letters, Vol. 100, Issue 17, Article No. 171109 https://doi.org/10.1063/1.4706259	journal	April 2012
Low resistivity aluminum nitride: carbon (AlN : C) films grown by metal organic chemical vapor deposition Wongchotigul, K.; Chen, N.; Zhang, D. P. Materials Letters, Vol. 26, Issue 4-5, p. 223-226 https://doi.org/10.1016/0167-577X(95)00225-1	journal	March 1996
Electron Paramagnetic Center in Neutron-Irradiated AlN Honda, Makoto; Atobe, Kozo; Fukuoka, Noboru Japanese Journal of Applied Physics, Vol. 29, Issue Part 2, No. 4 https://doi.org/10.1143/JJAP.29.L652	journal	April 1990
Luminescence mechanisms of oxygen-related defects in AlN Berzina, B.; Trinkler, L.; Sils, J. Radiation Effects and Defects in Solids, Vol. 157, Issue 6-12 https://doi.org/10.1080/10420150215822	journal	January 2002
Fabrication of native, single-crystal AlN substrates Schowalter, L. J.; Slack, G. A.; Whitlock, J. B. physica status solidi (c), Vol. 0, Issue 7, p. 1997-2000 https://doi.org/10.1002/pssc.200303462	journal	December 2003
Lattice Vibration Spectra of Aluminum Nitride Collins, A. T.; Lightowlers, E. C.; Dean, P. J. Physical Review, Vol. 158, Issue 3, p. 833-838 https://doi.org/10.1103/PhysRev.158.833	journal	June 1967
Intentional control of n -type conduction for Si-doped AlN and AlXGa1−XN (0.42⩽x<1) Taniyasu, Yoshitaka; Kasu, Makoto; Kobayashi, Naoki Applied Physics Letters, Vol. 81, Issue 7 https://doi.org/10.1063/1.1499738	journal	August 2002
Radiation induced recombination processes in AIN ceramics Trinkler, L.; Berzina, B. Journal of Physics: Condensed Matter, Vol. 13, Issue 40 https://doi.org/10.1088/0953-8984/13/40/307	journal	September 2001
Thick AlN layers grown by HVPE Kovalenkov, O.; Soukhoveev, V.; Ivantsov, V. Journal of Crystal Growth, Vol. 281, Issue 1, p. 87-92 https://doi.org/10.1016/j.jcrysgro.2005.03.054	journal	July 2005
Reduction of oxygen contamination in AlN Salzman, J.; Prawer, S.; Meyler, B. physica status solidi (c), Vol. 0, Issue 7, p. 2541-2544 https://doi.org/10.1002/pssc.200303387	journal	December 2003
Correlation between biaxial stress and free exciton transition in AlN epilayers Pantha, B. N.; Nepal, N.; Al Tahtamouni, T. M. Applied Physics Letters, Vol. 91, Issue 12 https://doi.org/10.1063/1.2789182	journal	September 2007
Photoluminescence Intensity and Spectral Distribution of GaN Films on SiC Substrates — The Dependence on Dislocation Density and Structure Hacke, P.; Kuramata, A.; Domen, K. physica status solidi (b), Vol. 216, Issue 1, p. 639-644 https://doi.org/10.1002/(SICI)1521-3951(199911)216:1<639::AID-PSSB639>3.0.CO;2-0	journal	November 1999
Synthesis of the Cubic Form of Boron Nitride Wentorf, R. H. The Journal of Chemical Physics, Vol. 34, Issue 3, p. 809-812 https://doi.org/10.1063/1.1731679	journal	March 1961
Oxygen behavior in aluminum nitride Kazan, M.; Rufflé, B.; Zgheib, Ch. Journal of Applied Physics, Vol. 98, Issue 10 https://doi.org/10.1063/1.2137461	journal	November 2005
X-ray characterization of bulk AIN single crystals grown by the sublimation technique Raghothamachar, B.; Dudley, M.; Rojo, J. C. Journal of Crystal Growth, Vol. 250, Issue 1-2, p. 244-250 https://doi.org/10.1016/S0022-0248(02)02253-4	journal	March 2003
Dimers [Al2N6]12- and Chains 1∞[AlN4/23-] in the Crystal Structures of Ca6[Al2N6] and Ba3[Al2N4] Ludwig, M.; Niewa, R.; Kniep, R. Zeitschrift für Naturforschung B, Vol. 54, Issue 4 https://doi.org/10.1515/znb-1999-0407	journal	April 1999
Light Output Enhancement of UV Light-Emitting Diodes With Embedded Distributed Bragg Reflector Cheng, Bo-Siao; Chiu, Ching-Hsueh; Lo, Ming-Hua IEEE Photonics Technology Letters, Vol. 23, Issue 10 https://doi.org/10.1109/LPT.2011.2121057	journal	May 2011
Improved dc characteristics of AlGaN/GaN high-electron-mobility transistors on AlN/sapphire templates Arulkumaran, S.; Sakai, M.; Egawa, T. Applied Physics Letters, Vol. 81, Issue 6 https://doi.org/10.1063/1.1498874	journal	August 2002
The estimation of maximum growth rate for aluminium nitride crystals grown by direct sublimation Dryburgh, P. M. Journal of Crystal Growth, Vol. 125, Issue 1-2, p. 65-68 https://doi.org/10.1016/0022-0248(92)90321-9	journal	November 1992
High-Efficiency Nitride-Based Light-Emitting Diodes with Moth-Eye Structure Kasugai, Hideki; Miyake, Yasuto; Honshio, Akira Japanese Journal of Applied Physics, Vol. 44, Issue 10 https://doi.org/10.1143/JJAP.44.7414	journal	October 2005
Characterization of Aluminum Nitride Crystals Grown by Sublimation Liu, L.; Zhuang, D.; Liu, B. physica status solidi (a), Vol. 188, Issue 2, p. 769-774 https://doi.org/10.1002/1521-396X(200112)188:2<769::AID-PSSA769>3.0.CO;2-G	journal	December 2001
Effect of point defects on the decay of the longitudinal optical mode Klemens, P. G. Physica B: Condensed Matter, Vol. 316-317, p. 413-416 https://doi.org/10.1016/S0921-4526(02)00530-6	journal	May 2002
InGaN/AlGaN Ultraviolet Light-Emitting Diode with a Ti ₃ O ₅ /Al ₂ O ₃ Distributed Bragg Reflector Jeong, Tak; Lee, Hyun Haeng; Park, Si-Hyun Japanese Journal of Applied Physics, Vol. 47, Issue 12 https://doi.org/10.1143/JJAP.47.8811	journal	December 2008
III-nitride blue and UV photonic-crystal light-emitting diodes Shakya, Jagat B.; Kim, Kyoung Hoon; Oder, Tom N. Fourth International Conference on Solid State Lighting, Vol. 5530 https://doi.org/10.1117/12.565632	conference	October 2004
Determination of the concentration of oxygen dissolved in the AlN lattice by hot gas extraction from AlN ceramics Thomas, Andreas; Müller, Gerd Journal of the European Ceramic Society, Vol. 8, Issue 1, p. 11-19 https://doi.org/10.1016/0955-2219(91)90087-G	journal	January 1991
Sublimation Growth of AlN in Vacuum and in a Gas Atmosphere Karpov, S. Yu.; Zimina, D. V.; Makarov, Yu. N. physica status solidi (a), Vol. 176, Issue 1, p. 435-438 https://doi.org/10.1002/(SICI)1521-396X(199911)176:1<435::AID-PSSA435>3.0.CO;2-M	journal	November 1999
Pinholes, Dislocations and Strain Relaxation in InGaN Jahnen, B.; Albrecht, M.; Dorsch, W. MRS Internet Journal of Nitride Semiconductor Research, Vol. 3 https://doi.org/10.1557/S1092578300001113	journal	January 1998
Electron Spin Resonance Analysis of Lattice Defects in Polycrystalline Aluminum Nitride Nakahata, Seiji; Sogabe, Kouichi; Matsuura, Takahiro Journal of the American Ceramic Society, Vol. 80, Issue 6 https://doi.org/10.1111/j.1151-2916.1997.tb03027.x	journal	June 1997
Sublimation growth of AlN bulk crystals in Ta crucibles Mokhov, E. N.; Avdeev, O. V.; Barash, I. S. Journal of Crystal Growth, Vol. 281, Issue 1, p. 93-100 https://doi.org/10.1016/j.jcrysgro.2005.03.016	journal	July 2005
Determination of the critical layer thickness in the InGaN/GaN heterostructures Parker, C. A.; Roberts, J. C.; Bedair, S. M. Applied Physics Letters, Vol. 75, Issue 18 https://doi.org/10.1063/1.125146	journal	November 1999
Fabrication of moth-eye structure on p-GaN layer of GaN-based LEDs for improvement of light extraction Hong, Eun-Ju; Byeon, Kyeong-Jae; Park, Hyoungwon Materials Science and Engineering: B, Vol. 163, Issue 3, p. 170-173 https://doi.org/10.1016/j.mseb.2009.05.018	journal	July 2009
Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys Nam, K. B.; Nakarmi, M. L.; Lin, J. Y. Applied Physics Letters, Vol. 86, Issue 22, Article No. 222108 https://doi.org/10.1063/1.1943489	journal	May 2005
Excitonic structure of bulk AlN from optical reflectivity and cathodoluminescence measurements Silveira, E.; Freitas, J. A.; Glembocki, O. J. Physical Review B, Vol. 71, Issue 4 https://doi.org/10.1103/PhysRevB.71.041201	journal	January 2005
Properties of Crucible Materials for Bulk Growth of AlN Slack, Glen A.; Whitlock, Jon; Morgan, Ken MRS Proceedings, Vol. 798 https://doi.org/10.1557/PROC-798-Y10.74	journal	January 2003
Formation of Solid Solution of Al1-xSixN (0 Kasu, Makoto; Taniyasu, Yoshitaka; Kobayashi, Naoki Japanese Journal of Applied Physics, Vol. 40, Issue Part 2, No. 10A https://doi.org/10.1143/JJAP.40.L1048	journal	October 2001
The nitrogen vacancy in aluminium nitride Vail, J. M.; Chevrier, D. K.; Pandey, R. Journal of Physics: Condensed Matter, Vol. 18, Issue 7 https://doi.org/10.1088/0953-8984/18/7/002	journal	January 2006
Polarization-dependent below band-gap optical absorption of aluminum nitride bulk crystals Bickermann, Matthias; Münch, Andreas; Epelbaum, Boris M. Journal of Applied Physics, Vol. 103, Issue 7 https://doi.org/10.1063/1.2903139	journal	April 2008
Ain single crystals Slack, G. A.; McNelly, T. F. Journal of Crystal Growth, Vol. 42, p. 560-563 https://doi.org/10.1016/0022-0248(77)90246-9	journal	December 1977
Growth of nitride crystals, BN, AlN and GaN by using a Na flux Yano, M.; Okamoto, M.; Yap, Y. K. Diamond and Related Materials, Vol. 9, Issue 3-6, p. 512-515 https://doi.org/10.1016/S0925-9635(99)00308-8	journal	April 2000
The BeO — MgO system Kordis, J. Journal of Nuclear Materials, Vol. 14, p. 322-325 https://doi.org/10.1016/0022-3115(64)90196-5	journal	January 1964
Changes in optical transmittance and surface morphology of AlN thin films exposed to atmosphere Watanabe, Yoshihisa; Sakuragi, Yoshifumi; Amamoto, Yoshiki Journal of Materials Research, Vol. 13, Issue 10 https://doi.org/10.1557/JMR.1998.0404	journal	October 1998
AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10% Shatalov, Max; Sun, Wenhong; Lunev, Alex Applied Physics Express, Vol. 5, Issue 8 https://doi.org/10.1143/APEX.5.082101	journal	July 2012
Synchrotron white beam topography characterization of physical vapor transport grown AlN and ammonothermal GaN Raghothamachar, Balaji; Vetter, William M.; Dudley, Michael Journal of Crystal Growth, Vol. 246, Issue 3-4, p. 271-280 https://doi.org/10.1016/S0022-0248(02)01751-7	journal	December 2002
Study on photoluminescence of GaN-based UV-LEDs with refractive index gradient polymeric nanopatterns Park, Manshik; Guiduk, Yu; Shin, Kyusoon Journal of Crystal Growth, Vol. 326, Issue 1, p. 28-32 https://doi.org/10.1016/j.jcrysgro.2011.01.045	journal	July 2011
Enhanced light output of GaN-based near-UV light-emitting diodes by using nanopatterned indium tin oxide electrodes Hong, Hyun-Gi; Kim, Seok-Soon; Kim, Dong-Yu Semiconductor Science and Technology, Vol. 21, Issue 5 https://doi.org/10.1088/0268-1242/21/5/004	journal	March 2006
Enhancement of light extraction in ultraviolet light-emitting diodes using nanopixel contact design with Al reflector Lobo, N.; Rodriguez, H.; Knauer, A. Applied Physics Letters, Vol. 96, Issue 8 https://doi.org/10.1063/1.3334721	journal	February 2010
Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes Pernot, Cyril; Kim, Myunghee; Fukahori, Shinya Applied Physics Express, Vol. 3, Issue 6 https://doi.org/10.1143/APEX.3.061004	journal	June 2010
Enhancement of near-UV GaN LED light extraction efficiency by GaN/sapphire template patterning Ali, M.; Svensk, O.; Riuttanen, L. Semiconductor Science and Technology, Vol. 27, Issue 8 https://doi.org/10.1088/0268-1242/27/8/082002	journal	July 2012
Phonon dynamics in AlN lattice contaminated by oxygen Kazan, M.; Rufflé, B.; Zgheib, Ch. Diamond and Related Materials, Vol. 15, Issue 10, p. 1525-1534 https://doi.org/10.1016/j.diamond.2005.12.034	journal	October 2006
Enhancement of light extraction from light emitting diodes Zhmakin, A. I. Physics Reports, Vol. 498, Issue 4-5, p. 189-241 https://doi.org/10.1016/j.physrep.2010.11.001	journal	February 2011
Effect of Impurities on Raman and Photoluminescence Spectra of AlN Bulk Crystals Sarua, A.; Rajasingam, S.; Kuball, M. MRS Proceedings, Vol. 798 https://doi.org/10.1557/PROC-798-Y5.17	journal	January 2003
Degradation in AlGaInN lasers Takeya, Motonobu; Mizuno, Takashi; Sasaki, Tomomi physica status solidi (c), Vol. 0, Issue 7, p. 2292-2295 https://doi.org/10.1002/pssc.200303324	journal	December 2003
Improvement of light extraction efficiency of UV-LED grown on low-dislocation-density AlGaN Iwaya, M.; Takanami, S.; Miyazaki, A. physica status solidi (a), Vol. 200, Issue 1, p. 110-113 https://doi.org/10.1002/pssa.200303504	journal	November 2003
The luminescence properties of AlN with manganese and rare earth activators under ultraviolet and cathode-ray excitation Karel, F.; Pastrňák, J. Czechoslovak Journal of Physics B, Vol. 20, Issue 1, p. 46-55 https://doi.org/10.1007/BF01698106	journal	January 1970
Li3[ScN2]: The First Nitridoscandate(III)—Tetrahedral Sc Coordination and Unusual MX2 Framework Niewa, Rainer; Zherebtsov, Dmitri A.; Leoni, Stefano Chemistry - A European Journal, Vol. 9, Issue 17 https://doi.org/10.1002/chem.200304986	journal	September 2003
Equilibrium pressure of N₂ over GaN and high pressure solution growth of GaN Karpiński, J.; Jun, J.; Porowski, S. Journal of Crystal Growth, Vol. 66, Issue 1, p. 1-10 https://doi.org/10.1016/0022-0248(84)90070-8	journal	January 1984
Comparison of various buffer schemes to grow GaN on large-area Si(111) substrates using metal-organic chemical-vapor deposition Venugopal, R.; Wan, J.; Melloch, M. Journal of Electronic Materials, Vol. 32, Issue 5, p. 371-374 https://doi.org/10.1007/s11664-003-0160-9	journal	May 2003
On the preparation, optical properties and electrical behaviour of aluminium nitride Cox, G. A.; Cummins, D. O.; Kawabe, K. Journal of Physics and Chemistry of Solids, Vol. 28, Issue 4, p. 543-548 https://doi.org/10.1016/0022-3697(67)90084-4	journal	April 1967
Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Inazu, Tetsuhiko; Fukahori, Shinya; Pernot, Cyril Japanese Journal of Applied Physics, Vol. 50 https://doi.org/10.1143/JJAP.50.122101	journal	November 2011
The synthesis of aluminum nitride single crystals Dugger, Cortland O. Materials Research Bulletin, Vol. 9, Issue 3, p. 331-336 https://doi.org/10.1016/0025-5408(74)90084-1	journal	March 1974
Optical properties of AlN determined by vacuum ultraviolet spectroscopy and spectroscopic ellipsometry data Jones, D. J.; French, R. H.; Müllejans, H. Journal of Materials Research, Vol. 14, Issue 11 https://doi.org/10.1557/JMR.1999.0587	journal	November 1999
Stimulated luminescence of AlN ceramics induced by ultraviolet radiation Trinkler, L.; Bøtter-Jensen, L.; Christensen, P. Radiation Measurements, Vol. 33, Issue 5, p. 731-735 https://doi.org/10.1016/S1350-4487(01)00093-2	journal	October 2001
n-type AlN layer by Si ion implantation Kanechika, Masakazu; Kachi, Tetsu Applied Physics Letters, Vol. 88, Issue 20 https://doi.org/10.1063/1.2204656	journal	May 2006
DX -center formation in wurtzite and zinc-blende Al x Ga 1 − x N Van de Walle, Chris G. Physical Review B, Vol. 57, Issue 4 https://doi.org/10.1103/PhysRevB.57.R2033	journal	January 1998
Deep-ultraviolet emission of AlGaN/AlN quantum wells on bulk AlN Gaska, R.; Chen, C.; Yang, J. Applied Physics Letters, Vol. 81, Issue 24 https://doi.org/10.1063/1.1524034	journal	December 2002
Chemical Mechanical Polishing of Gallium Nitride Tavernier, P. R.; Margalith, T.; Coldren, L. A. Electrochemical and Solid-State Letters, Vol. 5, Issue 8, p. G61-G64 https://doi.org/10.1149/1.1485807	journal	January 2002
Optical Properties of Strained AlGaN and GaInN on GaN Takeuchi, Tetsuya; Takeuchi, Hideo; Sota, Shigetoshi Japanese Journal of Applied Physics, Vol. 36, Issue Part 2, No. 2B https://doi.org/10.1143/JJAP.36.L177	journal	February 1997
Point defect content and optical transitions in bulk aluminum nitride crystals Bickermann, Matthias; Epelbaum, Boris M.; Filip, Octavian physica status solidi (b), Vol. 246, Issue 6, p. 1181-1183 https://doi.org/10.1002/pssb.200880753	journal	June 2009
PVT growth of bulk AlN crystals with low oxygen contamination Bickermann, M.; Epelbaum, B. M.; Winnacker, A. physica status solidi (c), Vol. 0, Issue 7 https://doi.org/10.1002/pssc.200303280	journal	December 2003
Mixing Rocksalt and Wurtzite Structure Binary Nitrides to Form Novel Ternary Alloys: ScGaN and MnGaN Constantin, Costel; Al-Brithen, Hamad; Haider, Muhammad B. MRS Proceedings, Vol. 799 https://doi.org/10.1557/PROC-799-Z9.5	journal	January 2003
The optical absorption edge of single‐crystal AlN prepared by a close‐spaced vapor process Perry, P. B.; Rutz, R. F. Applied Physics Letters, Vol. 33, Issue 4 https://doi.org/10.1063/1.90354	journal	August 1978
Optical Absorption and Cathodoluminescence of Epitaxial Aluminum Nitride Films Morita, Mizuho; Tsubouchi, Kazuo; Mikoshiba, Nobuo Japanese Journal of Applied Physics, Vol. 21, Issue Part 1, No. 7 https://doi.org/10.1143/JJAP.21.1102	journal	July 1982
Enhanced light output power of near UV light emitting diodes with graphene / indium tin oxide nanodot nodes for transparent and current spreading electrode Seo, Tae Hoon; Lee, Kang Jea; Park, Ah Hyun Optics Express, Vol. 19, Issue 23 https://doi.org/10.1364/OE.19.023111	journal	January 2011
Metastability of Oxygen Donors in AlGaN McCluskey, M. D.; Johnson, N. M.; Van de Walle, C. G. Physical Review Letters, Vol. 80, Issue 18 https://doi.org/10.1103/PhysRevLett.80.4008	journal	May 1998
Optical properties of the nitrogen vacancy in AlN epilayers Nepal, N.; Nam, K. B.; Nakarmi, M. L. Applied Physics Letters, Vol. 84, Issue 7 https://doi.org/10.1063/1.1648137	journal	February 2004
An aluminium nitride light-emitting diode with a wavelength of 210 nanometres Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki Nature, Vol. 441, Issue 7091, p. 325-328 https://doi.org/10.1038/nature04760	journal	May 2006
AlGaN/GaN heterostructures on insulating AlGaN nucleation layers Smart, J. A.; Schremer, A. T.; Weimann, N. G. Applied Physics Letters, Vol. 75, Issue 3 https://doi.org/10.1063/1.124384	journal	July 1999
Investigation of Oxygen-Related Luminescence Centres in AlN Ceramics Schweizer, S.; Rogulis, U.; Spaeth, J.-M. physica status solidi (b), Vol. 219, Issue 1, p. 171-180 https://doi.org/10.1002/1521-3951(200005)219:1<171::AID-PSSB171>3.0.CO;2-0	journal	May 2000
First-principles calculations for defects and impurities: Applications to III-nitrides Van de Walle, Chris G.; Neugebauer, Jörg Journal of Applied Physics, Vol. 95, Issue 8 https://doi.org/10.1063/1.1682673	journal	April 2004
Properties of Bulk AlN grown by thermodecomposition of AlCl₃⋅NH₃ Freitas, J. A.; Braga, G. C. B.; Silveira, E. Applied Physics Letters, Vol. 83, Issue 13, p. 2584-2586 https://doi.org/10.1063/1.1614418	journal	September 2003
Spectral properties of AIN ceramics Trinkler, L.; Berzina, Baiba; Sils, Janis International Conference on Advanced Optical Materials and Devices, SPIE Proceedings https://doi.org/10.1117/12.266513	conference	February 1997
Doping of Aigan Alloys Walle, Chris G. Van de; Stampfl, C.; Neugebauer, J. MRS Proceedings, Vol. 537 https://doi.org/10.1557/PROC-537-G10.4	journal	January 1998
Shallow donors in GaN Freitas, J. A.; Moore, W. J.; Shanabrook, B. V. physica status solidi (b), Vol. 240, Issue 2 https://doi.org/10.1002/pssb.200303402	journal	November 2003
Optical constants of epitaxial AlGaN films and their temperature dependence Brunner, D.; Angerer, H.; Bustarret, E. Journal of Applied Physics, Vol. 82, Issue 10 https://doi.org/10.1063/1.366309	journal	November 1997
Growth of high purity AlN crystals Slack, Glen A.; McNelly, T. F. Journal of Crystal Growth, Vol. 34, Issue 2, p. 263-279 https://doi.org/10.1016/0022-0248(76)90139-1	journal	July 1976
Sublimation Growth of Bulk AlN Crystals: Materials Compatibility and Crystal Quality Epelbaum, Boris M.; Hofmann, Dieter; Bickermann, Matthias Materials Science Forum, Vol. 389-393, p. 1445-1448 https://doi.org/10.4028/www.scientific.net/MSF.389-393.1445	journal	January 2002
Milliwatt power AlGaN quantum well deep ultraviolet light emitting diodes Chitnis, A.; Adivarahan, V.; Zhang, J. P. physica status solidi (a), Vol. 200, Issue 1, p. 99-101 https://doi.org/10.1002/pssa.200303420	journal	November 2003
Defects in epitaxial multilayers: I. Misfit dislocations Matthews, J. W.; Blakeslee, A. E. Journal of Crystal Growth, Vol. 27, p. 118-125 https://doi.org/10.1016/S0022-0248(74)80055-2	journal	December 1974
DX -behavior of Si in AlN Zeisel, R.; Bayerl, M. W.; Goennenwein, S. T. B. Physical Review B, Vol. 61, Issue 24 https://doi.org/10.1103/PhysRevB.61.R16283	journal	June 2000
Report on the growth of bulk aluminum nitride and subsequent substrate preparation Carlos Rojo, J.; Slack, Glen A.; Morgan, Kenneth Journal of Crystal Growth, Vol. 231, Issue 3, p. 317-321 https://doi.org/10.1016/S0022-0248(01)01452-X	journal	October 2001
Luminescence properties of wurtzite AlN nanotips Shi, Shih-Chen; Chen, Chia Fu; Chattopadhyay, Surojit Applied Physics Letters, Vol. 89, Issue 16, Article No. 163127 https://doi.org/10.1063/1.2364158	journal	October 2006
Phase relationships in the system Y-A1-O-N Sun, W. Y.; Huang, Z. K.; Tien, T. Y. Materials Letters, Vol. 11, Issue 3-4, p. 67-69 https://doi.org/10.1016/0167-577X(91)90087-M	journal	May 1991
Growth and characterization of epitaxial layers on aluminum nitride substrates prepared from bulk, single crystals Carlos Rojo, J.; Schowalter, Leo J.; Gaska, Remis Journal of Crystal Growth, Vol. 240, Issue 3-4, p. 508-512 https://doi.org/10.1016/S0022-0248(02)01078-3	journal	May 2002
Sublimation growth and characterization of bulk aluminum nitride single crystals Balkaş, Cengiz M.; Sitar, Zlatko; Zheleva, Tsvetanka Journal of Crystal Growth, Vol. 179, Issue 3-4, p. 363-370 https://doi.org/10.1016/S0022-0248(97)00160-7	journal	August 1997
Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys Nakarmi, M. L.; Nepal, N.; Lin, J. Y. Applied Physics Letters, Vol. 94, Issue 9, Article No. 091903 https://doi.org/10.1063/1.3094754	journal	March 2009
Phase equilibria pertinent to the growth of cubic boron nitride DeVries, R. C.; Fleischer, J. F. Journal of Crystal Growth, Vol. 13-14, p. 88-92 https://doi.org/10.1016/0022-0248(72)90068-1	journal	May 1972
Indium–Tin Oxide/Al Reflective Electrodes for Ultraviolet Light-Emitting Diodes Takehara, Kosuke; Takeda, Kenichiro; Ito, Shun Japanese Journal of Applied Physics, Vol. 51 https://doi.org/10.1143/JJAP.51.042101	journal	March 2012
Deep level defects and doping in high Al mole fraction AlGaN Bradley, S. T.; Goss, S. H.; Brillson, L. J. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 21, Issue 6 https://doi.org/10.1116/1.1627331	journal	January 2003
Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate Lee, Tsung-Xian; Gao, Ko-Fon; Chien, Wei-Ting Optics Express, Vol. 15, Issue 11 https://doi.org/10.1364/OE.15.006670	journal	January 2007
Crucible materials for growth of aluminum nitride crystals Schlesser, R.; Dalmau, R.; Zhuang, D. Journal of Crystal Growth, Vol. 281, Issue 1, p. 75-80 https://doi.org/10.1016/j.jcrysgro.2005.03.014	journal	July 2005

Similar Records

Method and apparatus for improving the performance of light emitting diodes

Patent · 1995 · OSTI ID:870408

Infrared emitting device and method

Patent · 1996 · OSTI ID:870928

Infrared emitting device and method

Patent · 1997 · OSTI ID:504961

Related Subjects

47 OTHER INSTRUMENTATION

Photon extraction from nitride ultraviolet light-emitting devices

Citation Formats

References (143)

Similar Records

Related Subjects