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Title: 1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

Abstract

In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific on-resistance R ON,SP (5.12 mΩ · cm 2), a low turn-on voltage (<0.7 V) and a high reverse breakdown voltage BV (>1.9 kV), were simultaneously achieved in devices with a 25 μm anode/cathode separation, resulting in a power figure-of-merit (FOM) BV2/R ON,SP of 727 MW·cm 2. The record high breakdown voltage of 1.9 kV is attributed to the dual field plate structure.

Authors:
 [1];  [2];  [1];  [1];  [1];  [1];  [3];  [3];  [1];  [2];  [2]
  1. Univ. of Notre Dame, IN (United States)
  2. Cornell Univ., Ithaca, NY (United States)
  3. IQE, Westborough, MA (United States)
Publication Date:
Research Org.:
Univ. of Notre Dame, IN (United States)
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Contributing Org.:
Cornell University, Ithaca, NY (United States); IQE/HRL, Westborough, MA (United States)
OSTI Identifier:
1170275
Report Number(s):
DOE-UND-AR0000454.1
Journal ID: ISSN 0741-3106; TRN: US1500478
Grant/Contract Number:  
AR0000454
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
IEEE Electron Device Letters
Additional Journal Information:
Journal Volume: 36; Journal Issue: 4; Journal ID: ISSN 0741-3106
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; Schottky barrier diode, GaN on Silicon, Breakdown voltage, High voltage device, AlGaN/GaN, Field plate

Citation Formats

Zhu, Mingda, Song, Bo, Qi, Meng, Hu, Zongyang, Nomoto, Kazuki, Yan, Xiaodong, Cao, Yu, Johnson, Wayne, Kohn, Erhard, Jena, Debdeep, and Xing, Grace Huili. 1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon. United States: N. p., 2015. Web. doi:10.1109/LED.2015.2404309.
Zhu, Mingda, Song, Bo, Qi, Meng, Hu, Zongyang, Nomoto, Kazuki, Yan, Xiaodong, Cao, Yu, Johnson, Wayne, Kohn, Erhard, Jena, Debdeep, & Xing, Grace Huili. 1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon. United States. doi:10.1109/LED.2015.2404309.
Zhu, Mingda, Song, Bo, Qi, Meng, Hu, Zongyang, Nomoto, Kazuki, Yan, Xiaodong, Cao, Yu, Johnson, Wayne, Kohn, Erhard, Jena, Debdeep, and Xing, Grace Huili. Mon . "1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon". United States. doi:10.1109/LED.2015.2404309. https://www.osti.gov/servlets/purl/1170275.
@article{osti_1170275,
title = {1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon},
author = {Zhu, Mingda and Song, Bo and Qi, Meng and Hu, Zongyang and Nomoto, Kazuki and Yan, Xiaodong and Cao, Yu and Johnson, Wayne and Kohn, Erhard and Jena, Debdeep and Xing, Grace Huili},
abstractNote = {In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific on-resistance RON,SP (5.12 mΩ · cm2), a low turn-on voltage (<0.7 V) and a high reverse breakdown voltage BV (>1.9 kV), were simultaneously achieved in devices with a 25 μm anode/cathode separation, resulting in a power figure-of-merit (FOM) BV2/RON,SP of 727 MW·cm2. The record high breakdown voltage of 1.9 kV is attributed to the dual field plate structure.},
doi = {10.1109/LED.2015.2404309},
journal = {IEEE Electron Device Letters},
number = 4,
volume = 36,
place = {United States},
year = {Mon Feb 16 00:00:00 EST 2015},
month = {Mon Feb 16 00:00:00 EST 2015}
}

Journal Article:
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Cited by: 37 works
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