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Title: 1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

Journal Article · · IEEE Electron Device Letters
 [1];  [2];  [1];  [1];  [1];  [1];  [3];  [3];  [1];  [2];  [2]
  1. Univ. of Notre Dame, IN (United States)
  2. Cornell Univ., Ithaca, NY (United States)
  3. IQE, Westborough, MA (United States)
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In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific on-resistance RON,SP (5.12 mΩ · cm2), a low turn-on voltage (<0.7 V) and a high reverse breakdown voltage BV (>1.9 kV), were simultaneously achieved in devices with a 25 μm anode/cathode separation, resulting in a power figure-of-merit (FOM) BV2/RON,SP of 727 MW·cm2. The record high breakdown voltage of 1.9 kV is attributed to the dual field plate structure.

Research Organization:
Univ. of Notre Dame, IN (United States)
Sponsoring Organization:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Contributing Organization:
Cornell University, Ithaca, NY (United States); IQE/HRL, Westborough, MA (United States)
Grant/Contract Number:
AR0000454
OSTI ID:
1170275
Report Number(s):
DOE-UND-AR0000454.1; TRN: US1500478
Journal Information:
IEEE Electron Device Letters, Vol. 36, Issue 4; ISSN 0741-3106
Publisher:
IEEECopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 140 works
Citation information provided by
Web of Science

Cited By (9)

Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures journal November 2019
Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact journal August 2017
High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy journal December 2015
Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown journal December 2015
High breakdown electric field in β-Ga 2 O 3 /graphene vertical barristor heterostructure journal January 2018
Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD journal February 2018
2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current journal January 2018
Device Design Assessment of GaN Merged P-i-N Schottky Diodes journal December 2019
Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact text January 2017

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42 ENGINEERING
Schottky barrier diode
GaN on Silicon
Breakdown voltage
High voltage device
AlGaN/GaN
Field plate