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Title: A High Temperature-Tolerant and Radiation-Resistant In-Core Neutron Sensor for Advanced Reactors. Final report

Abstract

The objectives of this project are to develop a small and reliable gallium nitride (GaN) neutron sensor that is capable of withstanding high neutron fluence and high temperature, isolating gamma background, and operating in a wide dynamic range. The first objective will be the understanding of the fundamental materials properties and electronic response of a GaN semiconductor materials and device in an environment of high temperature and intense neutron field. To achieve such goal, an in-situ study of electronic properties of GaN device such as I-V, leakage current, and charge collection efficiency (CCE) in high temperature using an external neutron beam will be designed and implemented. We will also perform in-core irradiation of GaN up to the highest yet fast neutron fluence and an off-line performance evaluation.

Authors:
 [1];  [1]
  1. The Ohio State Univ., Columbus, OH (United States)
Publication Date:
Research Org.:
The Ohio State Univ., Columbus, OH (United States)
Sponsoring Org.:
USDOE Office of Nuclear Energy (NE). Nuclear Energy University Programs (NEUP)
OSTI Identifier:
1169925
Report Number(s):
DOE/NEUP-11-3004
11-3004; TRN: US1500398
DOE Contract Number:  
AC07-05ID14517
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 22 GENERAL STUDIES OF NUCLEAR REACTORS; 36 MATERIALS SCIENCE; FAST NEUTRONS; GALLIUM NITRIDES; TEMPERATURE RANGE 0400-1000 K; NEUTRON BEAMS; LEAKAGE CURRENT; SENSORS; CHARGE COLLECTION; NEUTRON FLUENCE; EFFICIENCY; EVALUATION; IRRADIATION; PERFORMANCE; IN CORE INSTRUMENTS; NEUTRON DETECTORS; ELECTRIC CONDUCTIVITY; HEAT RESISTANT MATERIALS

Citation Formats

Cao, Lei, and Miller, Don. A High Temperature-Tolerant and Radiation-Resistant In-Core Neutron Sensor for Advanced Reactors. Final report. United States: N. p., 2015. Web. doi:10.2172/1169925.
Cao, Lei, & Miller, Don. A High Temperature-Tolerant and Radiation-Resistant In-Core Neutron Sensor for Advanced Reactors. Final report. United States. doi:10.2172/1169925.
Cao, Lei, and Miller, Don. Fri . "A High Temperature-Tolerant and Radiation-Resistant In-Core Neutron Sensor for Advanced Reactors. Final report". United States. doi:10.2172/1169925. https://www.osti.gov/servlets/purl/1169925.
@article{osti_1169925,
title = {A High Temperature-Tolerant and Radiation-Resistant In-Core Neutron Sensor for Advanced Reactors. Final report},
author = {Cao, Lei and Miller, Don},
abstractNote = {The objectives of this project are to develop a small and reliable gallium nitride (GaN) neutron sensor that is capable of withstanding high neutron fluence and high temperature, isolating gamma background, and operating in a wide dynamic range. The first objective will be the understanding of the fundamental materials properties and electronic response of a GaN semiconductor materials and device in an environment of high temperature and intense neutron field. To achieve such goal, an in-situ study of electronic properties of GaN device such as I-V, leakage current, and charge collection efficiency (CCE) in high temperature using an external neutron beam will be designed and implemented. We will also perform in-core irradiation of GaN up to the highest yet fast neutron fluence and an off-line performance evaluation.},
doi = {10.2172/1169925},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {1}
}