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Title: Methods and apparatuses for manufacturing geometric multicrystalline cast silicon and geometric multicrystalline cast silicon bodies for photovoltaics

Abstract

Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of geometrically ordered multi-crystalline silicon may be formed that is free or substantially free of radially-distributed impurities and defects and having at least two dimensions that are each at least about 10 cm is provided.

Inventors:
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1169631
Patent Number(s):
8,951,344
Application Number:
11/624,411
Assignee:
AMG Idealcast Solar Corporation (Wayne, PA) NREL
DOE Contract Number:  
AC36-98GO10337
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY

Citation Formats

Stoddard, Nathan G. Methods and apparatuses for manufacturing geometric multicrystalline cast silicon and geometric multicrystalline cast silicon bodies for photovoltaics. United States: N. p., 2015. Web.
Stoddard, Nathan G. Methods and apparatuses for manufacturing geometric multicrystalline cast silicon and geometric multicrystalline cast silicon bodies for photovoltaics. United States.
Stoddard, Nathan G. Tue . "Methods and apparatuses for manufacturing geometric multicrystalline cast silicon and geometric multicrystalline cast silicon bodies for photovoltaics". United States. doi:. https://www.osti.gov/servlets/purl/1169631.
@article{osti_1169631,
title = {Methods and apparatuses for manufacturing geometric multicrystalline cast silicon and geometric multicrystalline cast silicon bodies for photovoltaics},
author = {Stoddard, Nathan G},
abstractNote = {Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of geometrically ordered multi-crystalline silicon may be formed that is free or substantially free of radially-distributed impurities and defects and having at least two dimensions that are each at least about 10 cm is provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Feb 10 00:00:00 EST 2015},
month = {Tue Feb 10 00:00:00 EST 2015}
}

Patent:

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Works referenced in this record:

Bulk multicrystalline silicon growth for photovoltaic (PV) application
journal, April 2008


Directionally solidified solar-grade silicon using carbon crucibles
journal, April 1979


Electromagnetic continuous pulling process compared to current casting processes with respect to solidification characteristics
journal, April 2002


Growth of multicrystalline Si with controlled grain boundary configuration by the floating zone technique
journal, July 2005

  • Kitamura, Masayuki; Usami, Noritaka; Sugawara, Takamasa
  • Journal of Crystal Growth, Vol. 280, Issue 3-4, p. 419-424
  • DOI: 10.1016/j.jcrysgro.2005.04.049

Development of a rapid solidification process with a double-roller method
journal, February 1988


Development of a rapid solidification process with a double-roller method
journal, February 1988