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Title: Development of n+ -in-p large-area silicon microstrip sensors for very high radiation environments - ATLAS12 design and initial results

Authors:
; ; ; ; ; ; ;
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL)
Sponsoring Org.:
USDOE SC OFFICE OF HIGH ENERGY PHYSICS
OSTI Identifier:
1169569
Report Number(s):
BNL-107396-2015-JA
KA2101020
DOE Contract Number:
DE-SC00112704
Resource Type:
Journal Article
Resource Relation:
Journal Name: NUCLEAR INSTRUMENTS and METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
Country of Publication:
United States
Language:
English
Subject:
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS; Silicon strip

Citation Formats

Unno Y., Lynn D., Edwards, S.O., Pyatt, S., Thomas, F.P., Wilson, F.A., Kierstead, J., and et. al. Development of n+ -in-p large-area silicon microstrip sensors for very high radiation environments - ATLAS12 design and initial results. United States: N. p., 2014. Web. doi:10.1016/j.nima.2014.06.086.
Unno Y., Lynn D., Edwards, S.O., Pyatt, S., Thomas, F.P., Wilson, F.A., Kierstead, J., & et. al. Development of n+ -in-p large-area silicon microstrip sensors for very high radiation environments - ATLAS12 design and initial results. United States. doi:10.1016/j.nima.2014.06.086.
Unno Y., Lynn D., Edwards, S.O., Pyatt, S., Thomas, F.P., Wilson, F.A., Kierstead, J., and et. al. Mon . "Development of n+ -in-p large-area silicon microstrip sensors for very high radiation environments - ATLAS12 design and initial results". United States. doi:10.1016/j.nima.2014.06.086.
@article{osti_1169569,
title = {Development of n+ -in-p large-area silicon microstrip sensors for very high radiation environments - ATLAS12 design and initial results},
author = {Unno Y. and Lynn D. and Edwards, S.O. and Pyatt, S. and Thomas, F.P. and Wilson, F.A. and Kierstead, J. and et. al.},
abstractNote = {},
doi = {10.1016/j.nima.2014.06.086},
journal = {NUCLEAR INSTRUMENTS and METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT},
number = ,
volume = ,
place = {United States},
year = {Mon Jul 14 00:00:00 EDT 2014},
month = {Mon Jul 14 00:00:00 EDT 2014}
}
  • We have developed a novel and highly radiation-tolerant n-in-p silicon microstrip sensor for very high radiation environments such as in the Super Large Hadron Collider. The sensors are designed for a fluence of 1 x 10{sup 15} neq/cm{sup 2} and are fabricated from p-type, FZ, 6 in. (150 mm) wafers onto which we lay out a single 9.75 cm x 9.75 cm large-area sensor and several 1 cm x 1 cm miniature sensors with various n-strip isolation structures. By evaluating the sensors both pre- and post-irradiation by protons and neutrons, we find that the full depletion voltage evolves to approximatelymore » 800 V and that the n-strip isolation depends on the p{sup +} concentration. In addition, we characterize the interstrip resistance, interstrip capacitance and the punch-through-protection (PTP) voltage. The first fabrication batch allowed us to identify the weak spots in the PTP and the stereo strip layouts. By understanding the source of the weakness, the mask was modified accordingly. After modification, the follow-up fabrication batches and the latest fabrication of about 30 main sensors and associated miniature sensors have shown good performance, with no sign of microdischarge up to 1000 V.« less
  • The ATLAS collaboration R&D group 'Development of n-in-p Silicon Sensors for very high radiation environment' has developed single-sided p-type 9.75 cm x 9.75 cm sensors with an n-type readout strips having radiation tolerance against the 10{sup 15} 1-MeV neutron equivalent (n{sub eq})/cm{sup 2} fluence expected in the Super Large Hadron Collider. The compiled results of an evaluation of the bulk and strip parameter characteristics of 19 new non-irradiated sensors manufactured by Hamamatsu Photonics are presented in this paper. It was verified in detail that the sensors comply with the technical specifications required before irradiation. The reverse bias voltage dependence ofmore » various parameters, frequency dependence of tested capacitances, and strip scans of more than 23,000 strips as a test of parameter uniformity and strip quality over the whole sensor area have been carried out at Stony Brook University, Cambridge University, University of Geneva, and Academy of Sciences of CR and Charles University in Prague. No openings, shorts, or pinholes were observed on all tested strips, confirming the high quality of sensors made by Hamamatsu Photonics.« less
  • We are developing n{sup +}-in-p, p-bulk and n-readout, microstrip sensors, fabricated by Hamamatsu Photonics, as a non-inverting radiation hard silicon detector for the ATLAS tracker upgrade at the super-LHC (sLHC) proposed facility. The bulkradiationdamage after neutron and proton irradiations is characterized with the leakage current, charge collection and full depletion voltage. The detectors should provide acceptable signal, signal-to-noise ratio exceeding 15, after the integrated luminosity of 6000 fb{sup -1}, which is twice the sLHC integrated luminosity goal.
  • We are developing n{sup +}-in-p, p-bulk and n-readout, microstrip sensors as a non-inverting radiation hard silicon detector for the ATLAS Tracker Upgrade at the super LHC experiment. The surface radiation damages of the sensors fabricated by Hamamatsu Photonics are characterized on the interstrip capacitance, interstrip resistance and punch-through protection evolution. The detector should provide acceptable strip isolation, exceeding the input impedance of the signal readout chip {approx}1 k{Omega}, after the integrated luminosity of 6 ab{sup -1}, which is twice the luminosity goal.
  • Aiming at future uses in large silicon tracking devices, 4{times}8 cm{sup 2} silicon microstrip sensors were fabricated, and the processes related to such sensors were studied. The fabrication of 4x8 cm{sup 2} silicon microstrip sensors on 100 mm wafers has become a routine procedure with a good yield rate. A 4x64 cm{sup 2} long ladder, assembled from eight pieces of 4x8 cm{sup 2} sensors, has been tested at the CERN SPS area. Test results show that such a detector is feasible.