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Title: Processes for multi-layer devices utilizing layer transfer

Abstract

A method includes forming a release layer over a donor substrate. A plurality of devices made of a first semiconductor material are formed over the release layer. A first dielectric layer is formed over the plurality of devices such that all exposed surfaces of the plurality of devices are covered by the first dielectric layer. The plurality of devices are chemically attached to a receiving device made of a second semiconductor material different than the first semiconductor material, the receiving device having a receiving substrate attached to a surface of the receiving device opposite the plurality of devices. The release layer is etched to release the donor substrate from the plurality of devices. A second dielectric layer is applied over the plurality of devices and the receiving device to mechanically attach the plurality of devices to the receiving device.

Inventors:
; ; ; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1169088
Patent Number(s):
8,946,052
Application Number:
13/627,425
Assignee:
Sandia Corporation (Albuquerque, NM) SSO
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Nielson, Gregory N, Sanchez, Carlos Anthony, Tauke-Pedretti, Anna, Kim, Bongsang, Cederberg, Jeffrey, Okandan, Murat, Cruz-Campa, Jose Luis, and Resnick, Paul J. Processes for multi-layer devices utilizing layer transfer. United States: N. p., 2015. Web.
Nielson, Gregory N, Sanchez, Carlos Anthony, Tauke-Pedretti, Anna, Kim, Bongsang, Cederberg, Jeffrey, Okandan, Murat, Cruz-Campa, Jose Luis, & Resnick, Paul J. Processes for multi-layer devices utilizing layer transfer. United States.
Nielson, Gregory N, Sanchez, Carlos Anthony, Tauke-Pedretti, Anna, Kim, Bongsang, Cederberg, Jeffrey, Okandan, Murat, Cruz-Campa, Jose Luis, and Resnick, Paul J. Tue . "Processes for multi-layer devices utilizing layer transfer". United States. doi:. https://www.osti.gov/servlets/purl/1169088.
@article{osti_1169088,
title = {Processes for multi-layer devices utilizing layer transfer},
author = {Nielson, Gregory N and Sanchez, Carlos Anthony and Tauke-Pedretti, Anna and Kim, Bongsang and Cederberg, Jeffrey and Okandan, Murat and Cruz-Campa, Jose Luis and Resnick, Paul J},
abstractNote = {A method includes forming a release layer over a donor substrate. A plurality of devices made of a first semiconductor material are formed over the release layer. A first dielectric layer is formed over the plurality of devices such that all exposed surfaces of the plurality of devices are covered by the first dielectric layer. The plurality of devices are chemically attached to a receiving device made of a second semiconductor material different than the first semiconductor material, the receiving device having a receiving substrate attached to a surface of the receiving device opposite the plurality of devices. The release layer is etched to release the donor substrate from the plurality of devices. A second dielectric layer is applied over the plurality of devices and the receiving device to mechanically attach the plurality of devices to the receiving device.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Feb 03 00:00:00 EST 2015},
month = {Tue Feb 03 00:00:00 EST 2015}
}

Patent:

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