Two-stage epitaxial growth of vertically-aligned SnO2 nano-rods on(001) ceria
Journal Article
·
· Journal of Crystal Growth
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- American Superconductor, Devens, MA (United States)
Growth of high-aspect ratio oriented tin oxide, SnO2, nano-rods is complicated by a limited choice of matching substrates. We show that a (001) cerium oxide, CeO2, surface uniquely enables epitaxial growth of tin-oxide nano-rods via a two-stage process. First, (100) oriented nano-wires coat the ceria surface by lateral growth, forming a uniaxially-textured SnO2 deposit. Second, vertical SnO2nano-rods nucleate on the deposit by homoepitaxy. We demonstrate growth of vertically oriented 1-2 μm long nano-rods with an average diameter of ≈20 nm.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- DE-SC00112704; AR0000190
- OSTI ID:
- 1169021
- Alternate ID(s):
- OSTI ID: 1556278
- Report Number(s):
- BNL-106235-2014-JA; R&D Project: MA012; KC0202050; TRN: US1500472
- Journal Information:
- Journal of Crystal Growth, Vol. 408; ISSN 0022-0248
- Publisher:
- ElsevierCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 3 works
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