Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition

doi:10.1016/j.apsusc.2012.11.096

Title: Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition

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Abstract

Indium doped cadmium oxide (CdO:In) films with different In concentrations were prepared on low-cost glass substrates by pulsed filtered cathodic arc deposition (PFCAD). In this study, it is shown that polycrystalline CdO:In films with smooth surface and dense structure are obtained. In-doping introduces extra electrons leading to remarkable improvements of electron mobility and conductivity, as well as improvement in the optical transmittance due to the Burstein Moss effect. CdO:In films on glass substrates with thickness near 230 nm show low resistivity of 7.23 x 10 ^-5 Ωcm, high electron mobility of 142 cm ²/Vs, and mean transmittance over 80% from 500-1250 nm (including the glass substrate). These high quality pulsed arc-grown CdO:In films are potentially suitable for high efficiency multi-junction solar cells that harvest a broad range of the solar spectrum.

Authors:

Zhu, Yuankun ^[1]; Mendelsberg, Rueben J. ^[2]; Zhu, Jiaqi ^[3]; Han, Jiecai ^[3]; Anders, André ^[2]

Harbin Inst. of Technology, Harbin (China); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Harbin Inst. of Technology, Harbin (China)

Publication Date:: 2012-11-26

Research Org.:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Building Technologies Office (EE-5B); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

OSTI Identifier:: 1168606

Report Number(s):: LBNL-6067E
Journal ID: ISSN 0169-4332; TRN: US1600488

Grant/Contract Number:: AC02-05CH11231

Resource Type:: Journal Article: Accepted Manuscript

Journal Name:: Applied Surface Science

Additional Journal Information:: Journal Volume: 265; Journal Issue: C; Related Information: Journal Publication Date: 2013-01-15; Journal ID: ISSN 0169-4332

Publisher:: Elsevier

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 70 PLASMA PHYSICS AND FUSION TECHNOLOGY; indium-doped cadminum oxide; transparent conducting oxide; pulsed filtered cathodic arc deposition

Citation Formats


                    Zhu, Yuankun, Mendelsberg, Rueben J., Zhu, Jiaqi, Han, Jiecai, and Anders, André. Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition.  United States: N. p., 2012. 
        Web.  doi:10.1016/j.apsusc.2012.11.096.

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                    Zhu, Yuankun, Mendelsberg, Rueben J., Zhu, Jiaqi, Han, Jiecai, & Anders, André. Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition.  United States.  doi:10.1016/j.apsusc.2012.11.096.

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                    Zhu, Yuankun, Mendelsberg, Rueben J., Zhu, Jiaqi, Han, Jiecai, and Anders, André. Mon .  
        "Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition".  United States.  doi:10.1016/j.apsusc.2012.11.096.  https://www.osti.gov/servlets/purl/1168606.

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@article{osti_1168606,

  title        = {Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition},

  author       = {Zhu, Yuankun and Mendelsberg, Rueben J. and Zhu, Jiaqi and Han, Jiecai and Anders, André},

  abstractNote = {Indium doped cadmium oxide (CdO:In) films with different In concentrations were prepared on low-cost glass substrates by pulsed filtered cathodic arc deposition (PFCAD). In this study, it is shown that polycrystalline CdO:In films with smooth surface and dense structure are obtained. In-doping introduces extra electrons leading to remarkable improvements of electron mobility and conductivity, as well as improvement in the optical transmittance due to the Burstein Moss effect. CdO:In films on glass substrates with thickness near 230 nm show low resistivity of 7.23 x 10-5 Ωcm, high electron mobility of 142 cm2/Vs, and mean transmittance over 80% from 500-1250 nm (including the glass substrate). These high quality pulsed arc-grown CdO:In films are potentially suitable for high efficiency multi-junction solar cells that harvest a broad range of the solar spectrum.},

  doi          = {10.1016/j.apsusc.2012.11.096},

  journal      = {Applied Surface Science},

  issn         = {0169-4332},

  number       = C,

  volume       = 265,

  place        = {United States},

  year         = {2012},

  month        = {11}

}

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DOI: 10.1016/j.apsusc.2012.11.096

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