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Title: Atomically thin p-n junctions with van der Waals heterointerfaces

Authors:
; ; ; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC); Re-Defining Photovoltaic Efficiency Through Molecule Scale Control (RPEMSC)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1168192
DOE Contract Number:
SC0001085
Resource Type:
Journal Article
Resource Relation:
Journal Name: Nature nanotechnology; Journal Volume: 9; Related Information: RPEMSC partners with Columbia University (lead); Brookhaven National Laboratory; Purdue University
Country of Publication:
United States
Language:
English
Subject:
solar (photovoltaic), electrodes - solar, charge transport, materials and chemistry by design, optics, synthesis (novel materials)

Citation Formats

Lee, Chul-Ho, Lee, Gwan-Hyoung, van Der Zande, Arend M., Chen, Wenchao, Li, Yilei, Han, Minyong, Cui, Xu, Arefe, Ghidewon, Nuckolls, Colin, Heinz, Tony F, Guo, Jing, Hone, James, and Kim, Philip. Atomically thin p-n junctions with van der Waals heterointerfaces. United States: N. p., 2014. Web. doi:10.1038/nnano.2014.150.
Lee, Chul-Ho, Lee, Gwan-Hyoung, van Der Zande, Arend M., Chen, Wenchao, Li, Yilei, Han, Minyong, Cui, Xu, Arefe, Ghidewon, Nuckolls, Colin, Heinz, Tony F, Guo, Jing, Hone, James, & Kim, Philip. Atomically thin p-n junctions with van der Waals heterointerfaces. United States. doi:10.1038/nnano.2014.150.
Lee, Chul-Ho, Lee, Gwan-Hyoung, van Der Zande, Arend M., Chen, Wenchao, Li, Yilei, Han, Minyong, Cui, Xu, Arefe, Ghidewon, Nuckolls, Colin, Heinz, Tony F, Guo, Jing, Hone, James, and Kim, Philip. Sun . "Atomically thin p-n junctions with van der Waals heterointerfaces". United States. doi:10.1038/nnano.2014.150.
@article{osti_1168192,
title = {Atomically thin p-n junctions with van der Waals heterointerfaces},
author = {Lee, Chul-Ho and Lee, Gwan-Hyoung and van Der Zande, Arend M. and Chen, Wenchao and Li, Yilei and Han, Minyong and Cui, Xu and Arefe, Ghidewon and Nuckolls, Colin and Heinz, Tony F and Guo, Jing and Hone, James and Kim, Philip},
abstractNote = {},
doi = {10.1038/nnano.2014.150},
journal = {Nature nanotechnology},
number = ,
volume = 9,
place = {United States},
year = {Sun Aug 10 00:00:00 EDT 2014},
month = {Sun Aug 10 00:00:00 EDT 2014}
}
  • Here, the recent emergence of a wide variety of two-dimensional (2D) materials has created new opportunities for device concepts and applications. In particular, the availability of semiconducting transition metal dichalcogenides, in addition to semimetallic graphene and insulating boron nitride, has enabled the fabrication of “all 2D” van der Waals heterostructure devices. Furthermore, the concept of van der Waals heterostructures has the potential to be significantly broadened beyond layered solids. For example, molecular and polymeric organic solids, whose surface atoms possess saturated bonds, are also known to interact via van der Waals forces and thus offer an alternative for scalable integrationmore » with 2D materials. Here, we demonstrate the integration of an organic small molecule p-type semiconductor, pentacene, with a 2D n-type semiconductor, MoS 2. The resulting p–n heterojunction is gate-tunable and shows asymmetric control over the antiambipolar transfer characteristic. In addition, the pentacene/MoS 2 heterojunction exhibits a photovoltaic effect attributable to type II band alignment, which suggests that MoS 2 can function as an acceptor in hybrid solar cells.« less
    Cited by 62
  • Here, the recent emergence of a wide variety of two-dimensional (2D) materials has created new opportunities for device concepts and applications. In particular, the availability of semiconducting transition metal dichalcogenides, in addition to semimetallic graphene and insulating boron nitride, has enabled the fabrication of “all 2D” van der Waals heterostructure devices. Furthermore, the concept of van der Waals heterostructures has the potential to be significantly broadened beyond layered solids. For example, molecular and polymeric organic solids, whose surface atoms possess saturated bonds, are also known to interact via van der Waals forces and thus offer an alternative for scalable integrationmore » with 2D materials. Here, we demonstrate the integration of an organic small molecule p-type semiconductor, pentacene, with a 2D n-type semiconductor, MoS 2. The resulting p–n heterojunction is gate-tunable and shows asymmetric control over the antiambipolar transfer characteristic. In addition, the pentacene/MoS 2 heterojunction exhibits a photovoltaic effect attributable to type II band alignment, which suggests that MoS 2 can function as an acceptor in hybrid solar cells.« less
  • Understanding the coexistence, competition and/or cooperation between superconductivity and charge density waves (CDWs) in the transition metal dichalcogenides (TMDs) is an elusive goal which, when realized, promises to reveal fundamental information on this important class of materials. Here in this paper, we use four-terminal current-voltage measurements to study the Van der Waals interface between freshly exfoliated flakes of the high-T c superconductor, Bi-2212, and the CDW-dominated TMD layered material, 1T-TaS 2. For highly transparent barriers, there is a pronounced Andreev reflection feature providing evidence for proximity-induced high-Tc superconductivity in 1T-TaS 2 with a surprisingly large energy gap (~20 meV) equalmore » to half that of intrinsic Bi-2212 (~40 meV). Our systematic study using conductance spectroscopy of junctions with different transparencies also reveals the presence of two separate boson modes, each associated with a “dip-hump” structure. Finally, we infer that the proximityinduced high-T c superconductivity in the 1T-TaS 2 is driven by coupling to the metastable metallic phase coexisting within the Mott commensurate CDW (CCDW) phase and associated with a concomitant change of the CCDW order parameter in the interfacial region.« less
  • Theoretical studies of the potential energy surface (PES) and bound states are performed for the N{sub 2}–N{sub 2}O van der Waals (vdW) complex. A four-dimensional intermolecular PES is constructed at the level of single and double excitation coupled-cluster method with a non-iterative perturbation treatment of triple excitations [CCSD(T)] with aug-cc-pVTZ basis set supplemented with bond functions. Two equivalent T-shaped global minima are located, in which the O atom of N{sub 2}O monomer is near the N{sub 2} monomer. The intermolecular fundamental vibrational states are assigned by inspecting the orientation of the nodal surface of the wavefunctions. The calculated frequency formore » intermolecular disrotation mode is 23.086 cm{sup −1}, which is in good agreement with the available experimental data of 22.334 cm{sup −1}. A negligible tunneling splitting with the value of 4.2 MHz is determined for the ground vibrational state and the tunneling splitting increases as the increment of the vibrational frequencies. Rotational levels and transition frequencies are calculated for both isotopomers {sup 14}N{sub 2}–N{sub 2}O and {sup 15}N{sub 2}–N{sub 2}O. The accuracy of the PES is validated by the good agreement between theoretical and experimental results for the transition frequencies and spectroscopic parameters.« less