Method of fabricating low-dislocation-density epitaxially-grown films with textured surfaces
Patent
·
OSTI ID:1167224
A method for forming a surface-textured single-crystal film layer by growing the film atop a layer of microparticles on a substrate and subsequently selectively etching away the microparticles to release the surface-textured single-crystal film layer from the substrate. This method is applicable to a very wide variety of substrates and films. In some embodiments, the film is an epitaxial film that has been grown in crystallographic alignment with respect to a crystalline substrate.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Number(s):
- 8,932,403
- Application Number:
- 13/113,123
- OSTI ID:
- 1167224
- Resource Relation:
- Patent File Date: 2011 May 23
- Country of Publication:
- United States
- Language:
- English
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