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Title: Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication

Abstract

Embodiments of the invention provide a method for direct heteroepitaxial growth of vertical III-V semiconductor nanowires on a silicon substrate. The silicon substrate is etched to substantially completely remove native oxide. It is promptly placed in a reaction chamber. The substrate is heated and maintained at a growth temperature. Group III-V precursors are flowed for a growth time. Preferred embodiment vertical Group III-V nanowires on silicon have a core-shell structure, which provides a radial homojunction or heterojunction. A doped nanowire core is surrounded by a shell with complementary doping. Such can provide high optical absorption due to the long optical path in the axial direction of the vertical nanowires, while reducing considerably the distance over which carriers must diffuse before being collected in the radial direction. Alloy composition can also be varied. Radial and axial homojunctions and heterojunctions can be realized. Embodiments provide for flexible Group III-V nanowire structures. An array of Group III-V nanowire structures is embedded in polymer. A fabrication method forms the vertical nanowires on a substrate, e.g., a silicon substrate. Preferably, the nanowires are formed by the preferred methods for fabrication of Group III-V nanowires on silicon. Devices can be formed with core/shell and core/multi-shell nanowiresmore » and the devices are released from the substrate upon which the nanowires were formed to create a flexible structure that includes an array of vertical nanowires embedded in polymer.« less

Inventors:
; ; ; ; ;
Publication Date:
Research Org.:
The Regents of the University of California, Oakland, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1167211
Patent Number(s):
8,932,940
Application Number:
13/126,381
Assignee:
The Regents of the University of California (Oakland, CA) GFO
DOE Contract Number:  
FG36-08GO18016
Resource Type:
Patent
Resource Relation:
Patent File Date: 2009 Oct 28
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats

Wang, Deli, Soci, Cesare, Bao, Xinyu, Wei, Wei, Jing, Yi, and Sun, Ke. Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication. United States: N. p., 2015. Web.
Wang, Deli, Soci, Cesare, Bao, Xinyu, Wei, Wei, Jing, Yi, & Sun, Ke. Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication. United States.
Wang, Deli, Soci, Cesare, Bao, Xinyu, Wei, Wei, Jing, Yi, and Sun, Ke. Tue . "Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication". United States. doi:. https://www.osti.gov/servlets/purl/1167211.
@article{osti_1167211,
title = {Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication},
author = {Wang, Deli and Soci, Cesare and Bao, Xinyu and Wei, Wei and Jing, Yi and Sun, Ke},
abstractNote = {Embodiments of the invention provide a method for direct heteroepitaxial growth of vertical III-V semiconductor nanowires on a silicon substrate. The silicon substrate is etched to substantially completely remove native oxide. It is promptly placed in a reaction chamber. The substrate is heated and maintained at a growth temperature. Group III-V precursors are flowed for a growth time. Preferred embodiment vertical Group III-V nanowires on silicon have a core-shell structure, which provides a radial homojunction or heterojunction. A doped nanowire core is surrounded by a shell with complementary doping. Such can provide high optical absorption due to the long optical path in the axial direction of the vertical nanowires, while reducing considerably the distance over which carriers must diffuse before being collected in the radial direction. Alloy composition can also be varied. Radial and axial homojunctions and heterojunctions can be realized. Embodiments provide for flexible Group III-V nanowire structures. An array of Group III-V nanowire structures is embedded in polymer. A fabrication method forms the vertical nanowires on a substrate, e.g., a silicon substrate. Preferably, the nanowires are formed by the preferred methods for fabrication of Group III-V nanowires on silicon. Devices can be formed with core/shell and core/multi-shell nanowires and the devices are released from the substrate upon which the nanowires were formed to create a flexible structure that includes an array of vertical nanowires embedded in polymer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 13 00:00:00 EST 2015},
month = {Tue Jan 13 00:00:00 EST 2015}
}

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Works referenced in this record:

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