Results from Coupled Optical and Electrical Sentaurus TCAD Models of a Gallium Phosphide on Silicon Electron Carrier Selective Contact Solar Cell

Conference · Mon Jun 09 00:00:00 EDT 2014

OSTI ID:1167171

Limpert, Steven; Ghosh, Kunal; Wagner, Hannes; Bowden, Stuart; Honsberg, Christiana; Goodnick, Stephen; Bremner, Stephen; Green, Martin

We report results from coupled optical and electrical Sentaurus TCAD models of a gallium phosphide (GaP) on silicon electron carrier selective contact (CSC) solar cell. Detailed analyses of current and voltage performance are presented for devices having substrate thicknesses of 10 μm, 50 μm, 100 μm and 150 μm, and with GaP/Si interfacial quality ranging from very poor to excellent. Ultimate potential performance was investigated using optical absorption profiles consistent with light trapping schemes of random pyramids with attached and detached rear reflector, and planar with an attached rear reflector. Results indicate Auger-limited open-circuit voltages up to 787 mV and efficiencies up to 26.7% may be possible for front-contacted devices.

• Research Organization: University of New South Wales
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE)
• Contributing Organization: University of New South Wales, Arizona State University, Massachusetts Institute of Technology
• DOE Contract Number: EE0006335
• OSTI ID: 1167171
• Report Number(s): DOE-ASU-6335-003
• Resource Relation: Conference: 40th IEEE Photovoltaic Specialist Conference, Denver, CO, 6/8/2014-6/13/2014
• Country of Publication: United States
• Language: English