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Title: Array of titanium dioxide nanostructures for solar energy utilization

Abstract

An array of titanium dioxide nanostructures for solar energy utilization includes a plurality of nanotubes, each nanotube including an outer layer coaxial with an inner layer, where the inner layer comprises p-type titanium dioxide and the outer layer comprises n-type titanium dioxide. An interface between the inner layer and the outer layer defines a p-n junction.

Inventors:
; ; ; ;
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1166764
Patent Number(s):
8,920,767
Application Number:
13/213,923
Assignee:
UT-Battelle, LLC (Oak Ridge, TN ORO
DOE Contract Number:  
AC05-00OR22725
Resource Type:
Patent
Resource Relation:
Patent File Date: 2011 Aug 19
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 42 ENGINEERING

Citation Formats

Qiu, Xiaofeng, Parans Paranthaman, Mariappan, Chi, Miaofang, Ivanov, Ilia N, and Zhang, Zhenyu. Array of titanium dioxide nanostructures for solar energy utilization. United States: N. p., 2014. Web.
Qiu, Xiaofeng, Parans Paranthaman, Mariappan, Chi, Miaofang, Ivanov, Ilia N, & Zhang, Zhenyu. Array of titanium dioxide nanostructures for solar energy utilization. United States.
Qiu, Xiaofeng, Parans Paranthaman, Mariappan, Chi, Miaofang, Ivanov, Ilia N, and Zhang, Zhenyu. Tue . "Array of titanium dioxide nanostructures for solar energy utilization". United States. doi:. https://www.osti.gov/servlets/purl/1166764.
@article{osti_1166764,
title = {Array of titanium dioxide nanostructures for solar energy utilization},
author = {Qiu, Xiaofeng and Parans Paranthaman, Mariappan and Chi, Miaofang and Ivanov, Ilia N and Zhang, Zhenyu},
abstractNote = {An array of titanium dioxide nanostructures for solar energy utilization includes a plurality of nanotubes, each nanotube including an outer layer coaxial with an inner layer, where the inner layer comprises p-type titanium dioxide and the outer layer comprises n-type titanium dioxide. An interface between the inner layer and the outer layer defines a p-n junction.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 30 00:00:00 EST 2014},
month = {Tue Dec 30 00:00:00 EST 2014}
}

Patent:

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Works referenced in this record:

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