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Title: Ion chamber based neutron detectors

Abstract

A neutron detector with monolithically integrated readout circuitry, including: a bonded semiconductor die; an ion chamber formed in the bonded semiconductor die; a first electrode and a second electrode formed in the ion chamber; a neutron absorbing material filling the ion chamber; and the readout circuitry which is electrically coupled to the first and second electrodes. The bonded semiconductor die includes an etched semiconductor substrate bonded to an active semiconductor substrate. The readout circuitry is formed in a portion of the active semiconductor substrate. The ion chamber has a substantially planar first surface on which the first electrode is formed and a substantially planar second surface, parallel to the first surface, on which the second electrode is formed. The distance between the first electrode and the second electrode may be equal to or less than the 50% attenuation length for neutrons in the neutron absorbing material filling the ion chamber.

Inventors:
; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1165430
Patent Number(s):
8,912,502
Application Number:
13/559,370
Assignee:
Sandia Corporation (Albuquerque, NM) SSO
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2012 Jul 26
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 36 MATERIALS SCIENCE

Citation Formats

Derzon, Mark S, Galambos, Paul C, and Renzi, Ronald F. Ion chamber based neutron detectors. United States: N. p., 2014. Web.
Derzon, Mark S, Galambos, Paul C, & Renzi, Ronald F. Ion chamber based neutron detectors. United States.
Derzon, Mark S, Galambos, Paul C, and Renzi, Ronald F. Tue . "Ion chamber based neutron detectors". United States. doi:. https://www.osti.gov/servlets/purl/1165430.
@article{osti_1165430,
title = {Ion chamber based neutron detectors},
author = {Derzon, Mark S and Galambos, Paul C and Renzi, Ronald F},
abstractNote = {A neutron detector with monolithically integrated readout circuitry, including: a bonded semiconductor die; an ion chamber formed in the bonded semiconductor die; a first electrode and a second electrode formed in the ion chamber; a neutron absorbing material filling the ion chamber; and the readout circuitry which is electrically coupled to the first and second electrodes. The bonded semiconductor die includes an etched semiconductor substrate bonded to an active semiconductor substrate. The readout circuitry is formed in a portion of the active semiconductor substrate. The ion chamber has a substantially planar first surface on which the first electrode is formed and a substantially planar second surface, parallel to the first surface, on which the second electrode is formed. The distance between the first electrode and the second electrode may be equal to or less than the 50% attenuation length for neutrons in the neutron absorbing material filling the ion chamber.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 16 00:00:00 EST 2014},
month = {Tue Dec 16 00:00:00 EST 2014}
}

Patent:

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