Direct strain measurement in a 65 nm node strained silicon transistor by convergent-beam electron diffraction

Journal Article · Sun Jan 01 00:00:00 EST 2006 · APPLIED PHYSICS LETTERS

DOI:https://doi.org/10.1063/1.2362978· OSTI ID:1164077

Zhang, Peng ^[1]; Istratov, Andrei A. ^[1]; Weber, Eicke R. ^[1]; Kisielowski, Christian ^[2]; He, Haifeng ^[2]; Nelson, Chris ^[2]; Spence, John C.H ^[2]

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1. University of California, Berkeley
2. Lawrence Berkeley National Laboratory

Using the energy-filtered convergent-beam electron diffraction !CBED" technique in a transmission electron microscope, the authors report here a direct measurement of the lattice parameters of uniaxially strained silicon as close as 25 nm below the gate in a 65 nm node p-type metal-oxide-semiconductor field-effect transistor with SiGe source and drain. It is found that the dominant strain component (0.58%) is compressive along the source-drain direction. The compressive stress is 1.1 GPa along this direction. These findings demonstrate that CBED can serve as a strain metrology technique for the development of strained silicon device technology

• Research Organization: John Spence/Arizona State University
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES)
• DOE Contract Number: FG03-02ER45996
• OSTI ID: 1164077
• Journal Information: APPLIED PHYSICS LETTERS, Journal Name: APPLIED PHYSICS LETTERS
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE