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Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications

Patent ·
OSTI ID:1163749
; ;
Electronic device quality Aluminum Antimonide (AlSb)-based single crystals produced by controlled atmospheric annealing are utilized in various configurations for solar cell applications. Like that of a GaAs-based solar cell devices, the AlSb-based solar cell devices as disclosed herein provides direct conversion of solar energy to electrical power.
Research Organization:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC52-07NA27344
Assignee:
Lawrence Livermore National Security, LLC (Livermore, CA
Patent Number(s):
8,883,548
Application Number:
13/280,164
OSTI ID:
1163749
Country of Publication:
United States
Language:
English

References (5)

Stoichiometry-induced roughness on antimonide growth surfaces journal April 2001
The metal-organic chemical vapor deposition and properties of III–V antimony-based semiconductor materials journal March 2002
The 6.1Å family (InAs, GaSb, AlSb) and its heterostructures: a selective review journal January 2004
High-pressure phase transitions in AlSb journal April 2001
AlSb single-crystal grown by HPBM
  • Kutny, V. E.; Rybka, A. V.; Abyzov, A. S.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 458, Issue 1-2, p. 448-454 https://doi.org/10.1016/S0168-9002(00)01039-1
journal February 2001

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14 SOLAR ENERGY