Memristor using a transition metal nitride insulator
Patent
·
OSTI ID:1162107
Apparatus is disclosed in which at least one resistive switching element is interposed between at least a first and a second conducting electrode element. The resistive switching element comprises a metal oxynitride. A method for making such a resistive switching element is also disclosed.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Number(s):
- 8,872,246
- Application Number:
- 13/750,451
- OSTI ID:
- 1162107
- Country of Publication:
- United States
- Language:
- English
Nitride memristors
|
journal | July 2012 |
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