Digital Transfer Growth of Patterned 2D Metal Chalcogenides by Confined Nanoparticle Evaporation

Mahjouri-Samani, Masoud; Tian, Mengkun; Wang, Kai; Boulesbaa, Abdelaziz; Rouleau, Christopher M.; Puretzky, Alexander A.; McGuire, Michael A.; Srijanto, Bernadeta R.; Xiao, Kai; Eres, Gyula; Duscher, Gerd; Geohegan, David B.

doi:10.1021/nn5048124

Title: Digital Transfer Growth of Patterned 2D Metal Chalcogenides by Confined Nanoparticle Evaporation

Journal Article · Sun Oct 19 00:00:00 EDT 2014 · ACS Nano

DOI:https://doi.org/10.1021/nn5048124· OSTI ID:1162084

Mahjouri-Samani, Masoud ^[1]; Tian, Mengkun ^[2]; Wang, Kai ^[1]; Boulesbaa, Abdelaziz ^[1]; Rouleau, Christopher M. ^[1]; Puretzky, Alexander A. ^[1]; McGuire, Michael A. ^[3]; Srijanto, Bernadeta R. ^[1]; Xiao, Kai ^[1]; Eres, Gyula ^[3]; Duscher, Gerd ^[4]; Geohegan, David B. ^[1]

Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science
Univ. of Tennessee, Knoxville, TN (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division; Univ. of Tennessee, Knoxville, TN (United States)

Developing methods for the facile synthesis of two-dimensional (2D) metal chalcogenides and other layered materials is crucial for emerging applications in functional devices. Controlling the stoichiometry, number of the layers, crystallite size, growth location, and areal uniformity is challenging in conventional vapor phase synthesis. Here, we demonstrate a new route to control these parameters in the growth of metal chalcogenide (GaSe) and dichalcogenide (MoSe₂) 2D crystals by precisely defining the mass and location of the source materials in a confined transfer growth system. A uniform and precise amount of stoichiometric nanoparticles are first synthesized and deposited onto a substrate by pulsed laser deposition (PLD) at room temperature. This source substrate is then covered with a receiver substrate to form a confined vapor transport growth (VTG) system. By simply heating the source substrate in an inert background gas, a natural temperature gradient is formed that evaporates the confined nanoparticles to grow large, crystalline 2D nanosheets on the cooler receiver substrate, the temperature of which is controlled by the background gas pressure. Large monolayer crystalline domains (~ 100 m lateral sizes) of GaSe and MoSe₂ are demonstrated, as well as continuous monolayer films through the deposition of additional precursor materials. This novel PLD-VTG synthesis and processing method offers a unique approach for the controlled growth of large-area, metal chalcogenides with a controlled number of layers in patterned growth locations for optoelectronics and energy related applications.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1162084

Journal Information:: ACS Nano, Vol. 8, Issue 11; ISSN 1936-0851

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 43 works

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Title: Digital Transfer Growth of Patterned 2D Metal Chalcogenides by Confined Nanoparticle Evaporation

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