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Lattice-mismatched GaInP LED devices and methods of fabricating same

Patent ·
OSTI ID:1160241
; ; ;
A method (100) of fabricating an LED or the active regions of an LED and an LED (200). The method includes growing, depositing or otherwise providing a bottom cladding layer (208) of a selected semiconductor alloy with an adjusted bandgap provided by intentionally disordering the structure of the cladding layer (208). A first active layer (202) may be grown above the bottom cladding layer (208) wherein the first active layer (202) is fabricated of the same semiconductor alloy, with however, a partially ordered structure. The first active layer (202) will also be fabricated to include a selected n or p type doping. The method further includes growing a second active layer (204) above the first active layer (202) where the second active layer (204) Is fabricated from the same semiconductor alloy.
Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
Patent Number(s):
8,866,146
Application Number:
13/262,509
OSTI ID:
1160241
Country of Publication:
United States
Language:
English

References (13)

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40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions journal September 2008
High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction journal July 2007
40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells journal April 2007
A 27.3% efficient Ga0.5In0.5P/GaAs tandem solar cell journal February 1990
Characterization survey of GaxIn1−xAs/InAsyP1−y double heterostructures and InAsyP1−y multilayers grown on InP journal March 2004
Very high efficiency solar cell modules
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  • Progress in Photovoltaics: Research and Applications, Vol. 17, Issue 1, p. 75-83 https://doi.org/10.1002/pip.852
journal January 2009
Interplay of alloying and ordering on the electronic structure of GaxIn1−xP alloys journal December 2008
Visible light-emitting diodes grown on optimized ∇x[InxGa1−x]P/GaP epitaxial transparent substrates with controlled dislocation density journal August 2000
Effect of growth rate on the band gap of Ga0.5In0.5P journal October 1990
Tailoring the electronic properties of GaxIn1−xP beyond simply varying alloy composition journal March 2009
Non-Bloch Nature of Alloy States in a Conventional Semiconductor Alloy GaxIn1−xPas an Example journal July 2008
Disorder/order/disorder Ga0.5In0.5P visible light‐emitting diodes journal December 1992

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