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Title: Metamorphic Ga0.76In0.24As/GaAs0.75Sb0.25 Tunnel Junctions Grown on GaAs Substrates

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1159364
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 7, 21 August 2014; Related Information: Article No. 074508
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Garcia, I., Geisz, J. F., France, R. M., Kang, J., Wei, S. H., Ochoa, M., and Friedman, D. J.. Metamorphic Ga0.76In0.24As/GaAs0.75Sb0.25 Tunnel Junctions Grown on GaAs Substrates. United States: N. p., 2014. Web. doi:10.1063/1.4892773.
Garcia, I., Geisz, J. F., France, R. M., Kang, J., Wei, S. H., Ochoa, M., & Friedman, D. J.. Metamorphic Ga0.76In0.24As/GaAs0.75Sb0.25 Tunnel Junctions Grown on GaAs Substrates. United States. doi:10.1063/1.4892773.
Garcia, I., Geisz, J. F., France, R. M., Kang, J., Wei, S. H., Ochoa, M., and Friedman, D. J.. Thu . "Metamorphic Ga0.76In0.24As/GaAs0.75Sb0.25 Tunnel Junctions Grown on GaAs Substrates". United States. doi:10.1063/1.4892773.
@article{osti_1159364,
title = {Metamorphic Ga0.76In0.24As/GaAs0.75Sb0.25 Tunnel Junctions Grown on GaAs Substrates},
author = {Garcia, I. and Geisz, J. F. and France, R. M. and Kang, J. and Wei, S. H. and Ochoa, M. and Friedman, D. J.},
abstractNote = {},
doi = {10.1063/1.4892773},
journal = {Journal of Applied Physics},
number = 7, 21 August 2014,
volume = 116,
place = {United States},
year = {Thu Aug 21 00:00:00 EDT 2014},
month = {Thu Aug 21 00:00:00 EDT 2014}
}