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Title: Inhomogeneous Relaxation of a Molecular Layer on an Insulator due to Compressive Stress

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1158657
Report Number(s):
SLAC-REPRINT-2014-358
DOE Contract Number:  
AC02-76SF00515
Resource Type:
Journal Article
Journal Name:
Phys. Rev. Lett. 108: 206103, 2012
Additional Journal Information:
Journal Name: Phys. Rev. Lett. 108: 206103, 2012
Country of Publication:
United States
Language:
English
Subject:
PHYS

Citation Formats

Bocquet, F., Nony, L., Mannsfeld, S.C.B., Oison, V., Pawlak, R., Porte, L., and Loppacher, Ch. Inhomogeneous Relaxation of a Molecular Layer on an Insulator due to Compressive Stress. United States: N. p., 2014. Web.
Bocquet, F., Nony, L., Mannsfeld, S.C.B., Oison, V., Pawlak, R., Porte, L., & Loppacher, Ch. Inhomogeneous Relaxation of a Molecular Layer on an Insulator due to Compressive Stress. United States.
Bocquet, F., Nony, L., Mannsfeld, S.C.B., Oison, V., Pawlak, R., Porte, L., and Loppacher, Ch. Sat . "Inhomogeneous Relaxation of a Molecular Layer on an Insulator due to Compressive Stress". United States.
@article{osti_1158657,
title = {Inhomogeneous Relaxation of a Molecular Layer on an Insulator due to Compressive Stress},
author = {Bocquet, F. and Nony, L. and Mannsfeld, S.C.B. and Oison, V. and Pawlak, R. and Porte, L. and Loppacher, Ch.},
abstractNote = {},
doi = {},
journal = {Phys. Rev. Lett. 108: 206103, 2012},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {9}
}