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Title: DIFFUSION OF MAGNESIUM AND MICROSTRUCTURES IN Mg+ IMPLANTED SILICON CARBIDE

Abstract

Following our previous reports [ 1- 3], further isochronal annealing (2 hrs.) of the monocrystalline 6H-SiC and polycrystalline CVD 3C-SiC was performed at 1573 and 1673 K in Ar environment. SIMS data indicate that observable Mg diffusion in 6H-SiC starts and a more rapid diffusion in CVD 3C-SiC occurs at 1573 K. The implanted Mg atoms tend to diffuse deeper into the undamaged CVD 3C-SiC. The microstructure with Mg inclusions in the as-implanted SiC has been initially examined using high-resolution STEM. The presence of Mg in the TEM specimen has been confirmed based on EDS mapping. Additional monocrystalline 3C-SiC samples have been implanted at 673 K to ion fluence 3 times higher than the previous one. RBS/C analysis has been performed before and after thermal annealing at 1573 K for 12 hrs. Isothermal annealing at 1573 K is being carried out and Mg depth profiles being measured. Microstructures in both the as-implanted and annealed samples are also being examined using STEM.

Authors:
; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1158492
Report Number(s):
PNNL-SA-104598
AT6020100
DOE Contract Number:
AC05-76RL01830
Resource Type:
Book
Resource Relation:
Related Information: Fusion Materials Semiannual Progress Report for the Period Ending June 30, 2014, 56; DOE-ER-0313/56:103-108
Country of Publication:
United States
Language:
English

Citation Formats

Jiang, Weilin, Edwards, Danny J., Jung, Hee Joon, Wang, Zheming, Zhu, Zihua, Roosendaal, Timothy J., Hu, Shenyang Y., Henager, Charles H., Kurtz, Richard J., and Wang, Yongqiang. DIFFUSION OF MAGNESIUM AND MICROSTRUCTURES IN Mg+ IMPLANTED SILICON CARBIDE. United States: N. p., 2014. Web.
Jiang, Weilin, Edwards, Danny J., Jung, Hee Joon, Wang, Zheming, Zhu, Zihua, Roosendaal, Timothy J., Hu, Shenyang Y., Henager, Charles H., Kurtz, Richard J., & Wang, Yongqiang. DIFFUSION OF MAGNESIUM AND MICROSTRUCTURES IN Mg+ IMPLANTED SILICON CARBIDE. United States.
Jiang, Weilin, Edwards, Danny J., Jung, Hee Joon, Wang, Zheming, Zhu, Zihua, Roosendaal, Timothy J., Hu, Shenyang Y., Henager, Charles H., Kurtz, Richard J., and Wang, Yongqiang. Thu . "DIFFUSION OF MAGNESIUM AND MICROSTRUCTURES IN Mg+ IMPLANTED SILICON CARBIDE". United States. doi:.
@article{osti_1158492,
title = {DIFFUSION OF MAGNESIUM AND MICROSTRUCTURES IN Mg+ IMPLANTED SILICON CARBIDE},
author = {Jiang, Weilin and Edwards, Danny J. and Jung, Hee Joon and Wang, Zheming and Zhu, Zihua and Roosendaal, Timothy J. and Hu, Shenyang Y. and Henager, Charles H. and Kurtz, Richard J. and Wang, Yongqiang},
abstractNote = {Following our previous reports [ 1- 3], further isochronal annealing (2 hrs.) of the monocrystalline 6H-SiC and polycrystalline CVD 3C-SiC was performed at 1573 and 1673 K in Ar environment. SIMS data indicate that observable Mg diffusion in 6H-SiC starts and a more rapid diffusion in CVD 3C-SiC occurs at 1573 K. The implanted Mg atoms tend to diffuse deeper into the undamaged CVD 3C-SiC. The microstructure with Mg inclusions in the as-implanted SiC has been initially examined using high-resolution STEM. The presence of Mg in the TEM specimen has been confirmed based on EDS mapping. Additional monocrystalline 3C-SiC samples have been implanted at 673 K to ion fluence 3 times higher than the previous one. RBS/C analysis has been performed before and after thermal annealing at 1573 K for 12 hrs. Isothermal annealing at 1573 K is being carried out and Mg depth profiles being measured. Microstructures in both the as-implanted and annealed samples are also being examined using STEM.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Aug 28 00:00:00 EDT 2014},
month = {Thu Aug 28 00:00:00 EDT 2014}
}

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