{ital In} {ital situ} x-ray diffraction study of the role of annealing ambient in epitaxial CoSi{sub 2} growth from Co/Ti bilayers on Si(001)

Journal Article · Mon Sep 11 00:00:00 EDT 1995 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.114951· OSTI ID:115786

Selinder, T I; Miller, D J; Gray, K E ^[1]

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1. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

The reactions during annealing of a Co/Ti bilayer structure on Si(001) were studied {ital in} {ital situ} to reveal the roles of the Ti interlayer and the annealing ambient on the formation of epitaxial CoSi{sub 2}. We shown that an oxygen contaminant in the nitrogen annealing gas is needed to form a stable, Co--Ti--O (spinel) membrane at the metal/Si interface that limits diffusion and is crucial for the perfection of epitaxial CoSi{sub 2}. Annealing in vacuum or otherwise inert environments led to polycrystalline CoSi{sub 2} films and no spinel phase. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

• Research Organization: Argonne National Lab. (ANL), Argonne, IL (United States)
• DOE Contract Number: W-31109-ENG-38
• OSTI ID: 115786
• Journal Information: Applied Physics Letters, Vol. 67, Issue 11; Other Information: PBD: 11 Sep 1995
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COBALT SILICIDES
EPITAXY
ANNEALING
CHEMICAL REACTIONS
COBALT
DIFFUSION
INTERFACES
MORPHOLOGY
SILICON
TITANIUM
X-RAY DIFFRACTION