Back contact buffer layer for thin-film solar cells
Patent
·
OSTI ID:1157082
A photovoltaic cell structure is disclosed that includes a buffer/passivation layer at a CdTe/Back contact interface. The buffer/passivation layer is formed from the same material that forms the n-type semiconductor active layer. In one embodiment, the buffer layer and the n-type semiconductor active layer are formed from cadmium sulfide (CdS). A method of forming a photovoltaic cell includes the step of forming the semiconductor active layers and the buffer/passivation layer within the same deposition chamber and using the same material source.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE
- Assignee:
- The University of Toledo (Toledo, OH)
- Patent Number(s):
- 8,829,342
- Application Number:
- 13/515,686
- OSTI ID:
- 1157082
- Country of Publication:
- United States
- Language:
- English
High efficiency 1 micron thick sputtered CdTe solar cells
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conference | January 2005 |
10% efficiency solar cells with 0.5 µm of CdTe
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conference | June 2009 |
High efficiency ultra-thin sputtered CdTe solar cells
|
journal | September 2006 |
High efficiency, magnetron sputtered CdS/CdTe solar cells
|
journal | December 2004 |
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